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Creators/Authors contains: "Rojas Sánchez, Juan-Carlos"

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  1. ; ; ; ; ; ; ; ; ; ; et al (, Nature)
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  2. ; ; ; ; ; ; ; ; ; (, Journal of Applied Physics)
    Switching of perpendicular magnetization via spin–orbit torque (SOT) is of particular interest in the development of non-volatile magnetic random access memory (MRAM) devices. We studied current-induced magnetization switching of Ir/GdFeCo/Cu/Pt heterostructures in a Hall cross geometry as a function of the in-plane applied magnetic field. Remarkably, magnetization switching is observed at zero applied field. This is shown to result from the competition between SOT, the Oersted field generated by the charge current, and the material's coercivity. Our results show a means of achieving zero-field switching that can impact the design of future spintronics devices, such as SOT-MRAM. 
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