skip to main content

Search for: All records

Creators/Authors contains: "Shi, Yin"

Note: When clicking on a Digital Object Identifier (DOI) number, you will be taken to an external site maintained by the publisher. Some full text articles may not yet be available without a charge during the embargo (administrative interval).
What is a DOI Number?

Some links on this page may take you to non-federal websites. Their policies may differ from this site.

  1. Abstract The concept of electron acceleration by a laser beam in vacuum is attractive due to its seeming simplicity, but its implementation has been elusive, as it requires efficient electron injection into the beam and a mechanism for counteracting transverse expulsion. Electron injection during laser reflection off a plasma mirror is a promising mechanism, but it is sensitive to the plasma density gradient that is hard to control. We get around this sensitivity by utilizing volumetric injection that takes place when a helical laser beam traverses a low-density target. The electron retention is achieved by choosing the helicity, such that the transverse field profiles are hollow while the longitudinal fields are peaked on central axis. We demonstrate using three-dimensional simulations that a 3 PW helical laser can generate a 50 pC low-divergence electron beam with a maximum energy of 1.5 GeV. The unique features of the beam are short acceleration distance (∼100 μm), compact transverse size, high areal density, and electron bunching (∼100 as bunch duration).
    Free, publicly-accessible full text available December 1, 2023
  2. Abstract Using plasma mirror injection we demonstrate, both analytically and numerically, that a circularly polarized helical laser pulse can accelerate highly collimated dense bunches of electrons to several hundred MeV using currently available laser systems. The circular-polarized helical (Laguerre–Gaussian) beam has a unique field structure where the transverse fields have helix-like wave-fronts which tend to zero on-axis where, at focus, there are large on-axis longitudinal magnetic and electric fields. The acceleration of electrons by this type of laser pulse is analyzed as a function of radial mode number and it is shown that the radial mode number has a profound effect on electron acceleration close to the laser axis. Using three-dimensional particle-in-cell simulations a circular-polarized helical laser beam with power of 0.6 PW is shown to produce several dense attosecond bunches. The bunch nearest the peak of the laser envelope has an energy of 0.47 GeV with spread as narrow as 10%, a charge of 26 pC with duration of ∼ 400 as, and a very low divergence of 20 mrad. The confinement by longitudinal magnetic fields in the near-axis region allows the longitudinal electric fields to accelerate the electrons over a long period after the initial reflection. Both themore »longitudinal E and B fields are shown to be essential for electron acceleration in this scheme. This opens up new paths toward attosecond electron beams, or attosecond radiation, at many laser facilities around the world.« less
    Free, publicly-accessible full text available November 15, 2022
  3. Understanding the pathways and time scales underlying electrically driven insulator-metal transitions is crucial for uncovering the fundamental limits of device operation. Using stroboscopic electron diffraction, we perform synchronized time-resolved measurements of atomic motions and electronic transport in operating vanadium dioxide (VO2) switches. We discover an electrically triggered, isostructural state that forms transiently on microsecond time scales, which is shown by phase-field simulations to be stabilized by local heterogeneities and interfacial interactions between the equilibrium phases. This metastable phase is similar to that formed under photoexcitation within picoseconds, suggesting a universal transformation pathway. Our results establish electrical excitation as a route for uncovering nonequilibrium and metastable phases in correlated materials, opening avenues for engineering dynamical behavior in nanoelectronics.