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  1. Pressure-induced phase transformations (PTs) in Si, the most important electronic material, have been broadly studied. However, strain-induced PTs in Si were never studied in situ. Here, we revealed in situ various important plastic strain-induced PT phenomena. A correlation between the particle size's direct and inverse Hall-Petch effect on yield strength and pressure for strain-induced PT is found. For 100 nm particles, strain-induced PT Si-I³Si-II initiates at 0.3 GPa versus 16.2 GPa under hydrostatic conditions; Si-I³Si-III PT starts at 0.6 GPa and does not occur under hydrostatic pressure. Pressure in small Si-II and Si-III regions is ~5-7 GPa higher than in Si-I. Retaining Si-II and single-phase Si-III at ambient pressure and obtaining reverse Si-II³Si-I PT demonstrates the possibilities of manipulating different synthetic paths. The obtained results corroborate the elaborated dislocation pileup-based mechanism and have numerous applications for developing economic defect-induced synthesis of nanostructured materials, surface treatment (polishing, turning, etc.), and friction. 
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    Free, publicly-accessible full text available March 6, 2025
  2. Free, publicly-accessible full text available January 1, 2025
  3. Pressure-induced phase transformations (PTs) between numerous phases of Si, the most important electronic material, have been studied for decades. This is not the case for plastic strain-induced PTs. Here, we revealed in-situ various unexpected plastic strain-induced PT phenomena. Thus, for 100 nm Si, strain-induced PT Si-I to Si-II (and Si-I to Si-III) initiates at 0.4 GPa (0.6 GPa) versus 16.2 GPa (∞, since it does not occur) under hydrostatic conditions; for 30 nm Si, it is 6.1 GPa versus ∞. The predicted theoretical correlation between the direct and inverse Hall-Petch effect of the grain size on the yield strength and the minimum pressure for strain-induced PT is confirmed for the appearance of Si-II. Retaining Si-II at ambient pressure and obtaining reverse Si-II to Si-I PT are achieved, demonstrating the possibilities of manipulating different synthetic paths. 
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  4. Cerium oxide (ceria, CeO2) is frequently used as a standard in applications such as synchrotron and x-ray free electron lasers for calibrating x-ray wavelengths and offers the potential for understanding the high pressure properties and deformation mechanisms in a wide range of similar face centered cubic (fcc) materials. In this study, the pressure dependence of the strength of ceria was investigated up to 38 GPa using angle dispersive x-ray diffraction in a radial geometry in a diamond anvil cell. In this experiment, the difference in the stress along the axis of compression and perpendicular to the direction of compression can be determined, giving a quantity known as the differential stress. It was found that the differential stress (t), a measure of the lower bound for yield strength, initially increases rapidly from 0.35 ± 0.06 GPa to 2.2 ± 0.4 GPa at pressures of 1.8 and 3.8 GPa, respectively. Above 4 GPa, t increases more slowly to 13.8 ± 2.6 GPa at a pressure of 38 GPa. The changes in the preferred orientation (texture) of CeO2 with pressure were also measured, allowing for the determination of active deformation mechanisms using an elasto-viscoplastic self-consistent model (EVPSC). It was found that as pressure increased, the [001] direction had a slight preferred orientation along the axis of compression. Our EVPSC model of experimental fiber (cylindrically symmetric) textures and lattice strains were most consistent with dominant slip activity along {111}⟨11¯0⟩. 
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