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Radiation susceptibility of electronics has always been about probing electrical properties in either transient or time-accumulated phenomena. As the size and complexity of electronic chips or systems increase, detection of the most vulnerable regions becomes more time consuming and challenging. In this study, we hypothesize that localized mechanical stress, if overlapping electrically sensitive regions, can make electronic devices more susceptible to radiation. Accordingly, we develop an indirect technique to map mechanical and electrical hotspots to identify radiation-susceptible regions of the operational amplifier AD844 to ionizing radiation. Mechanical susceptibility is measured using pulsed thermal phase analysis via lock-in thermography and electrical biasing is used to identify electrically relevant regions. A composite score of electrical and mechanical sensitivity was constructed to serve as a metric for ionizing radiation susceptibility. Experimental results, compared against the literature, indicate effectiveness of the new technique in the rapid detection of radiation-vulnerable regions. The findings could be attractive for larger systems, for which traditional analysis would take —two to three orders of magnitude more time to complete. However, the indirect nature of the technique makes the study more approximate and in need for more consistency and validation efforts.

 

In this work, we demonstrate the rejuvenation of Ti/4H-SiC Schottky barrier diodes after forward current-induced degradation, at room temperature and in a few seconds, by exploiting the physics of high-energy electron interactions with defects. The diodes were intentionally degraded to a 42% decrease in forward current and a 9% increase in leakage current through accelerated electrical stressing. The key feature of our proposed rejuvenation process is very high current density electrical pulsing with low frequency and duty cycle to suppress any temperature rise. The primary stimulus is, therefore, the electron wind force, which is derived from the loss of the momentum of the high energy electrons upon collision with the defects. Such defect-specific or “just in location” mobilization of atoms allows a significant decrease in defect concentration, which is not possible with conventional thermal annealing that requires higher temperatures and longer times. We show evidence of rejuvenation with additional improvement in leakage current (16%) and forward current (38%) beyond the pristine condition. Transmission electron microscopy, geometric phase analysis, Raman spectroscopy, and energy dispersive x-ray-spectroscopy reveal the enhancement of defects and interfaces. The ultrafast and room temperature process has the potential for rejuvenating electronic devices operating in high power and harsh environmental conditions. 

The wide bandgap semiconductors SiC and GaN are commercialized for power electronics and for visible to UV light-emitting diodes in the case of the GaN/InGaN/AlGaN materials system. For power electronics applications, SiC MOSFETs (metal–oxide–semiconductor field effect transistors) and rectifiers and GaN/AlGaN HEMTs and vertical rectifiers provide more efficient switching at high-power levels than do Si devices and are now being used in electric vehicles and their charging infrastructure. These devices also have applications in more electric aircraft and space missions where high temperatures and extreme environments are involved. In this review, their inherent radiation hardness, defined as the tolerance to total doses, is compared to Si devices. This is higher for the wide bandgap semiconductors, due in part to their larger threshold energies for creating defects (atomic bond strength) and more importantly due to their high rates of defect recombination. However, it is now increasingly recognized that heavy-ion-induced catastrophic single-event burnout in SiC and GaN power devices commonly occurs at voltages ∼50% of the rated values. The onset of ion-induced leakage occurs above critical power dissipation within the epitaxial regions at high linear energy transfer rates and high applied biases. The amount of power dissipated along the ion track determines the extent of the leakage current degradation. The net result is the carriers produced along the ion track undergo impact ionization and thermal runaway. Light-emitting devices do not suffer from this mechanism since they are forward-biased. Strain has also recently been identified as a parameter that affects radiation susceptibility of the wide bandgap devices.

 

Abstract Discovering multifunctional materials with tunable plasmonic properties, capable of surviving harsh environments is critical for advanced optical and telecommunication applications. We chose high-entropy transition-metal carbides because of their exceptional thermal, chemical stability, and mechanical properties. By integrating computational thermodynamic disorder modeling and time-dependent density functional theory characterization, we discovered a crossover energy in the infrared and visible range, corresponding to a metal-to-dielectric transition, exploitable for plasmonics. It was also found that the optical response of high-entropy carbides can be largely tuned from the near-IR to visible when changing the transition metal components and their concentration. By monitoring the electronic structures, we suggest rules for optimizing optical properties and designing tailored high-entropy ceramics. Experiments performed on the archetype carbide HfTa 4 C 5 yielded plasmonic properties from room temperature to 1500K. Here we propose plasmonic transition-metal high-entropy carbides as a class of multifunctional materials. Their combination of plasmonic activity, high-hardness, and extraordinary thermal stability will result in yet unexplored applications.