Toward High-Performance p-Type Two-Dimensional Field Effect Transistors: Contact Engineering, Scaling, and Doping
- PAR ID:
- 10504495
- Publisher / Repository:
- ACS Publications
- Date Published:
- Journal Name:
- ACS Nano
- Volume:
- 17
- Issue:
- 20
- ISSN:
- 1936-0851
- Page Range / eLocation ID:
- 19709 to 19723
- Format(s):
- Medium: X
- Sponsoring Org:
- National Science Foundation
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