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Contrary to topological insulators, topological semimetals possess a nontrivial chiral anomaly that leads to negative magnetoresistance and are hosts to both conductive bulk states and topological surface states with intriguing transport properties for spintronics. Here, we fabricate highly-ordered metallic Pt₃Sn and Pt₃Sn_xFe_1-xthin films via sputtering technology. Systematic angular dependence (both in-plane and out-of-plane) study of magnetoresistance presents surprisingly robust quadratic and linear negative longitudinal magnetoresistance features for Pt₃Sn and Pt₃Sn_xFe_1-x, respectively. We attribute the anomalous negative longitudinal magnetoresistance to the type-II Dirac semimetal phase (pristine Pt₃Sn) and/or the formation of tunable Weyl semimetal phases through symmetry breaking processes, such as magnetic-atom doping, as confirmed by first-principles calculations. Furthermore, Pt₃Sn and Pt₃Sn_xFe_1-xshow the promising performance for facilitating the development of advanced spin-orbit torque devices. These results extend our understanding of chiral anomaly of topological semimetals and can pave the way for exploring novel topological materials for spintronic devices.

 

A novel antiferromagnetic semiconductor, Eu 3 Sn 2 P 4 , has been discovered. Single crystals of Eu 3 Sn 2 P 4 were prepared using the Sn self-flux method. The crystal structure determined by single crystal X-ray diffraction shows that Eu 3 Sn 2 P 4 crystallizes in the orthorhombic structure with the space group Cmca (Pearson Symbol, oP 216). Six Sn–Sn dimers connected by P atoms form a Sn 12 P 24 crown-shaped cluster with a Eu atom located in the center. Magnetization measurements indicate that the system orders antiferromagnetically below a T N ∼14 K at a low field and undergoes a metamagnetic transition at a high field when T < T N . The effective magnetic moment is 7.41(3) μ B per Eu, corresponding to Eu 2+ . The electric resistivity reveals a non-monotonic temperature dependence with non-metallic behavior below ∼60 K, consistent with the band structure calculations. By fitting the data using the thermally activated resistivity formula, we estimate the energy gap to be ∼0.14 eV. Below T N , the resistivity tends to saturate, suggesting the reduction of charge-spin scattering.