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Integration of amorphous ferromagnetic oxides with multiferroic materials for room temperature magnetoelectric spintronics

https://doi.org/10.1038/s41598-020-58592-5

Taz, Humaira ; Prasad, Bhagwati ; Huang, Yen-Lin ; Chen, Zuhuang ; Hsu, Shang-Lin ; Xu, Ruijuan ; Thakare, Vishal ; Sakthivel, Tamil Selvan ; Liu, Chenze ; Hettick, Mark ; et al ( December 2020 , Scientific Reports)

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Enhanced ferroelectricity in ultrathin films grown directly on silicon

https://doi.org/10.1038/s41586-020-2208-x

Cheema, Suraj S. ; Kwon, Daewoong ; Shanker, Nirmaan ; dos Reis, Roberto ; Hsu, Shang-Lin ; Xiao, Jun ; Zhang, Haigang ; Wagner, Ryan ; Datar, Adhiraj ; McCarter, Margaret R. ; et al ( April 2020 , Nature)

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Defect‐Enhanced Polarization Switching in the Improper Ferroelectric LuFeO 3

https://doi.org/10.1002/adma.202000508

Barrozo, Petrucio ; Småbråten, Didrik René ; Tang, Yun‐Long ; Prasad, Bhagwati ; Saremi, Sahar ; Ozgur, Rustem ; Thakare, Vishal ; Steinhardt, Rachel A. ; Holtz, Megan E. ; Stoica, Vladimir Alexandru ; et al ( April 2020 , Advanced Materials)

Abstract
Results of switching behavior of the improper ferroelectric LuFeO₃are presented. Using a model set of films prepared under controlled chemical and growth‐rate conditions, it is shown that defects can reduce the quasi‐static switching voltage by up to 40% in qualitative agreement with first‐principles calculations. Switching studies show that the coercive field has a stronger frequency dispersion for the improper ferroelectrics compared to a proper ferroelectric such as PbTiO₃. It is concluded that the primary structural order parameter controls the switching dynamics of such improper ferroelectrics.

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