Search for: All records

Abstract Emerging non-volatile memristor-based devices with resistive switching (RS) materials are being widely researched as promising contenders for the next generation of data storage and neuromorphic technologies. Titanium nitride (TiN_x) is a common industry-friendly electrode system for RS; however, the precise TiN_xproperties required for optimum RS performance is still lacking. Herein, using ion-assisted DC magnetron sputtering, we demonstrate the key importance not only of engineering the TiN_xbottom electrodes to be dense, smooth, and conductive, but also understoichiometric in N. With these properties, RS in HfO₂-based memristive devices is shown to be optimised for TiN_0.96. These devices have switching voltages ≤ ±1 V with promising device-to-device uniformity, endurance, memory window of ~40, and multiple non-volatile intermediate conductance levels. This study highlights the importance of precise tuning of TiN_xbottom electrodes to achieve robust performance of oxide resistive switching materials. 

Abstract Complex oxide thin films cover a range of physical properties and multifunctionalities that are critical for logic, memory, and optical devices. Typically, the high‐quality epitaxial growth of these complex oxide thin films requires single crystalline oxide substrates such as SrTiO₃(STO), MgO, LaAlO₃, a‐Al₂O_3,and many others. Recent successes in transferring these complex oxides as free‐standing films not only offer great opportunities in integrating complex oxides on other devices, but also present enormous opportunities in recycling the deposited substrates after transfer for cost‐effective and sustainable processing of complex oxide thin films. In this work, the surface modification effects introduced on the recycled STO are investigated, and their impacts on the microstructure and properties of subsequently grown epitaxial oxide thin films are assessed and compared with those grown on the pristine substrates. Detailed analyses using high‐resolution scanning transmission electron microscopy and geometric phase analysis demonstrate distinct strain states on the surfaces of the recycled STO versus the pristine substrates, suggesting a pre‐strain state in the recycled STO substrates due to the previous deposition layer. These findings offer opportunities in growing highly mismatched oxide films on the recycled STO substrates with enhanced physical properties. Specifically, yttrium iron garnet (Y₃Fe₅O₁₂) films grown on recycled STO present different ferromagnetic responses compared to that on the pristine substrates, underscoring the effects of surface modification. The study demonstrates the feasibility of reuse and redeposition using recycled substrates. Via careful handling and preparation, high‐quality epitaxial thin films can be grown on recycled substrates with comparable or even better structural and physical properties toward sustainable process of complex oxide devices. 

The integration of nanocomposite thin films with combined multifunctionalities on flexible substrates is desired for flexible device design and applications. For example, combined plasmonic and magnetic properties could lead to unique optical switchable magnetic devices and sensors. In this work, a multiphase TiN-Au-Ni nanocomposite system with core–shell-like Au-Ni nanopillars embedded in a TiN matrix has been demonstrated on flexible mica substrates. The three-phase nanocomposite film has been compared with its single metal nanocomposite counterparts, i.e., TiN-Au and TiN-Ni. Magnetic measurement results suggest that both TiN-Au-Ni/mica and TiN-Ni/mica present room-temperature ferromagnetic property. Tunable plasmonic property has been achieved by varying the metallic component of the nanocomposite films. The cyclic bending test was performed to verify the property reliability of the flexible nanocomposite thin films upon bending. This work opens a new path for integrating complex nitride-based nanocomposite designs on mica towards multifunctional flexible nanodevice applications. 

Magnetic and ferroelectric oxide thin films have long been studied for their applications in electronics, optics, and sensors. The properties of these oxide thin films are highly dependent on the film growth quality and conditions. To maximize the film quality, epitaxial oxide thin films are frequently grown on single‐crystal oxide substrates such as strontium titanate (SrTiO₃) and lanthanum aluminate (LaAlO₃) to satisfy lattice matching and minimize defect formation. However, these single‐crystal oxide substrates cannot readily be used in practical applications due to their high cost, limited availability, and small wafer sizes. One leading solution to this challenge is film transfer. In this demonstration, a material from a new class of multiferroic oxides is selected, namely bismuth‐based layered oxides, for the transfer. A water‐soluble sacrificial layer of Sr₃Al₂O₆is inserted between the oxide substrate and the film, enabling the release of the film from the original substrate onto a polymer support layer. The films are transferred onto new substrates of silicon and lithium niobate (LiNbO₃) and the polymer layer is removed. These substrates allow for the future design of electronic and optical devices as well as sensors using this new group of multiferroic layered oxide films. 

Abstract Hyperbolic metamaterials (HMM) possess significant anisotropic physical properties and tunability and thus find many applications in integrated photonic devices. HMMs consisting of metal and dielectric phases in either multilayer or vertically aligned nanocomposites (VAN) form are demonstrated with different hyperbolic properties. Herein, self‐assembled HfO₂‐Au/TiN‐Au multilayer thin films, combining both the multilayer and VAN designs, are demonstrated. Specifically, Au nanopillars embedded in HfO₂and TiN layers forming the alternative layers of HfO₂‐Au VAN and TiN‐Au VAN. The HfO₂and TiN layer thickness is carefully controlled by varying laser pulses during pulsed laser deposition (PLD). Interestingly, tunable anisotropic physical properties can be achieved by adjusting the bi‐layer thickness and the number of the bi‐layers. Type II optical hyperbolic dispersion can be obtained from high layer thickness structure (e.g., 20 nm), while it can be transformed into Type I optical hyperbolic dispersion by reducing the thickness to a proper value (e.g., 4 nm). This new nanoscale hybrid metamaterial structure with the three‐phase VAN design shows great potential for tailorable optical components in future integrated devices. 

Bi₂NiMnO₆(BNMO) epitaxial thin films with a layered supercell (LSC) structure have emerged as a promising single‐phase multiferroic material recently. Because of the required strain state for the formation of the LSC structures, most of the previous BNMO films are demonstrated on rigid oxide substrates such as SrTiO₃and LaAlO₃. Here, the potential of BNMO films grown on muscovite mica substrates via van der Waals epitaxy, spotlighting their suitability for cutting‐edge flexible device applications is delved. Comprehensive scanning transmission electron microscopy/energy‐dispersive X‐ray analyses reveal a layered structure in the BNMO film and a pristine interface with the mica substrate, indicating high‐quality deposition and minimal interfacial defects. Capitalizing on its unique property of easily cleavable layers due to weak van der Waals forces in mica substrates, flexible BNMO/mica samples are fixed. A standout feature of the BNMO film grown on mica substrate is its consistent multiferroic properties across varied mechanical conditions. A novel technique is introduced for thinning the mica substrate and subsequent transfer of the sample, with post‐transfer analyses validating the preserved structural and magnetic attributes of the film. Overall, this study illuminates the resilient multiferroic properties of BNMO films on mica, offering promising avenues for their integration for next‐generation flexible electronics.