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Creators/Authors contains: "W. Li1, K. Nomoto1"

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  1. (, IEDM19-273)
    We demonstrate record-high performance in normally-off single and multi-fin b-Ga2O3 vertical power transistors. The effective channel mobility is significantly improved up to ~130 cm2/V·s with a post-deposition annealing process. With a fin-channel width of 0.15 μm, true normallyoff operation is achieved with a threshold voltage of >1.5 V; a record-high breakdown voltage of 2.66 kV (at Vgs=0 V) and a specific on-resistance of 25.2 mW·cm2 are obtained in multifin devices, corresponding to a Baliga’s figure-of-merit of 280 MW/cm2, which is the highest among all Ga2O3 transistors. Devices with (100)-like fin-channel sidewalls exhibit the lowest interface trapped charge density and a significantly higher current than other fin orientations. These findings offer important insights on the development of Ga2O3 MOSFETs and show great promise of Ga2O3 vertical power devices. 
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