skip to main content

Search for: All records

Creators/Authors contains: "Wang, Haonan"

Note: When clicking on a Digital Object Identifier (DOI) number, you will be taken to an external site maintained by the publisher. Some full text articles may not yet be available without a charge during the embargo (administrative interval).
What is a DOI Number?

Some links on this page may take you to non-federal websites. Their policies may differ from this site.

  1. The structure of power flows in transmission grids is evolving and is likelyto change significantly in the coming years due to the rapid growth ofrenewable energy generation that introduces randomness and bidirectionalpower flows. Another transformative aspect is the increasing penetrationof various smart-meter technologies. Inexpensive measurement devicescan be placed at practically any component of the grid. Using modeldata reflecting smart-meter measurements,we propose a two-stage procedure for detecting a fault in a regional powergrid. In the first stage, a fault is detected in real time. In the second stage,the faulted line is identified with a negligible delay. The approach uses onlythe voltage modulus measured at buses (nodes of the grid) as the input.Our method does not require prior knowledge of thefault type. The method is fully implemented in  R.Pseudo code and complete mathematical formulas are provided.
    Free, publicly-accessible full text available July 19, 2024
  2. Free, publicly-accessible full text available May 11, 2024
  3. Free, publicly-accessible full text available April 3, 2024
  4. Abstract

    Moiré potential profile can form flat electronic bands and manifest correlated states of electrons, where carrier doping is essential for observing those correlations. In this work, we uncover a hidden but remarkable many-electron effect: doped carriers form a two-dimensional plasmon and strongly couple with quasiparticles to renormalize moiré potential and realize ultra-flat bands. Using many-body perturbation theory, we demonstrate this effect in twisted MoS2/WS2heterobilayer. The moiré potential is significantly enhanced upon carrier doping, and the bandwidth is reduced by order of magnitude, leading to drastic quenching of electronic kinetic energy and stronger correlation. We further predict that the competition between correlated mechanisms can be effectively controlled via doping, giving hope to a quantum transition between Mott and charge-transfer insulating states. Our work reveals that the potential renormalization effect of doping is much more significant in determining and controlling many-electron electronic correlations than sole filling-factor tuning in semiconducting moiré crystals.

  5. Free, publicly-accessible full text available January 1, 2024
  6. Free, publicly-accessible full text available November 1, 2023