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Single-qubit gates are essential components of a universal quantum computer. Without selective addressing of individual qubits, scalable implementation of quantum algorithms is extremely challenging. When the qubits are discrete points or regions on a lattice, selectively addressing magnetic spin qubits at the nanoscale remains a challenge due to the difficulty of localizing and confining a classical divergence-free field to a small volume of space. Herein we propose a technique for addressing spin qubits using voltage-control of nanoscale magnetism, exemplified by the use of voltage control of magnetic anisotropy. We show that by tuning the frequency of the nanomagnet’s electric field drive to the Larmor frequency of the spins confined to a nanoscale volume, and by modulating the phase of the drive, single-qubit quantum gates with fidelities approaching those for fault-tolerant quantum computing can be implemented. Such single-qubit gate operations require only tens of femto-Joules per gate operation and have lossless, purely magnetic field control. Their physical realization is also straightforward using foundry manufacturing techniques.

Quantum computers provide faster solutions to specific compute-intensive classical problems. However, building a fault-tolerant quantum computer architecture is challenging and demands integrating several qubits with optimized signal routing while maintaining its quantum coherence. Experimental realization of such quantum computers with diverse functional components in a planar monolithic device architecture is challenging due to material and thermodynamic mismatch between various elements. Furthermore, it requires complex control and routing, resulting in parasitic modes and reduced qubit coherence. Thus, a scalable interposer architecture is essential to merge and interconnect different functionalities within a sophisticated chip while maintaining qubit coherence. As such, heterogeneous integration is an optimum solution to scale the qubit technology. We propose a heterogeneously integrated quantum chip optoelectronics interposer as a solution to the high-density scalable qubit architecture. Our technology is high-volume manufacturable and provides novel optical I/O solutions for on-chip, chip-to-chip, and cryogenic-to-outside world interconnect.

The inelastic scattering length (L_s) is a length scale of fundamental importance in condensed matters due to the relationship between inelastic scattering and quantum dephasing. In quantum anomalous Hall (QAH) materials, the mesoscopic length scaleL_splays an instrumental role in determining transport properties. Here we examineL_sin three regimes of the QAH system with distinct transport behaviors: the QAH, quantum critical, and insulating regimes. Although the resistance changes by five orders of magnitude when tuning between these distinct electronic phases, scaling analyses indicate a universalL_samong all regimes. Finally, mesoscopic scaled devices with sizes on the order ofL_swere fabricated, enabling the direct detection of the value ofL_sin QAH samples. Our results unveil the fundamental length scale that governs the transport behavior of QAH materials.

Magnetic domain structures are active electron transport agents and can be used to induce large magnetoresistance (MR), particularly in half-metallic solids. We have studied the excess resistance induced by a single magnetic domain wall in a one-dimensional half-metallic CrO 2 nanoscale conductor with a built-in constriction whose channel width ( d ) ranges from 30 to 200 nm. We observed that the domain wall-induced MR is enhanced by 70 fold when d decreases from 200 nm to 30 nm. We speculate that the enhancement is due to the increased domain wall resistance (DWR) and the extra contribution of ballistic magnetoresistance (BMR). We have uncovered a large size effect of d on the MR induced by the domain wall, which scales with d as d −1.87±0.32 . Accordingly, we predict that the MR ratio of a simple CrO 2 nanowire impregnated with a constriction at a 150 nm 2 cross-section could reach 100%. This large MR far exceeds that of a conventional ferromagnetic nanowire, confirming the role of half metallicity on enhanced magneto-transport.

Magnetic skyrmions are of great interest to both fundamental research and applications in post-von-Neumann computing devices. The successful implementation of skyrmionic devices requires functionalities of skyrmions with effective controls. Here we show that the local dynamics of skyrmions, in contrast to the global dynamics of a skyrmion as a whole, can be introduced to provide effective functionalities for versatile computing. A single skyrmion interacting with local pinning centres under thermal effects can fluctuate in time and switch between a small-skyrmion and a large-skyrmion state, thereby serving as a robust true random number generator for probabilistic computing. Moreover, neighbouring skyrmions exhibit an anti-correlated coupling in their fluctuation dynamics. Both the switching probability and the dynamic coupling strength can be tuned by modifying the applied magnetic field and spin current. Our results could lead to progress in developing magnetic skyrmionic devices with high tunability and efficient controls.