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Magnetic skyrmions are topologically nontrivial spin textures with envisioned applications in energy-efficient magnetic information storage. Toggling the presence of magnetic skyrmions via writing/deleting processes is essential for spintronics applications, which usually require the application of a magnetic field, a gate voltage or an electric current. Here we demonstrate the reversible field-free writing/deleting of skyrmions at room temperature, via hydrogen chemisorption/desorption on the surface of Ni and Co films. Supported by Monte-Carlo simulations, the skyrmion creation/annihilation is attributed to the hydrogen-induced magnetic anisotropy change on ferromagnetic surfaces. We also demonstrate the role of hydrogen and oxygen on magnetic anisotropy and skyrmion deletion on other magnetic surfaces. Our results open up new possibilities for designing skyrmionic and magneto-ionic devices.

The angular dependence of the microwave-driven spin rectification (SR) effect in single crystalline Co_0.5Fe_0.5alloy film is systematically investigated. Due to the strong current-orientation dependent anisotropic magnetoresistance (AMR), the SR effects in CoFe film strongly deviate from the ordinary sin 2φ_Mcosφ_Mrelation withφ_Mdefined as the magnetization angle away from the current. A giant Gilbert damping anisotropy in the CoFe film with a maximum–minimum ratio of 520% is observed, which can impose a strong anisotropy onto magnetic susceptibility. The observed unusual angular dependence can be well explained by the theory including current-orientation dependent AMR and anisotropic magnetic susceptibility. Our work also suggests that the strong current-orientation dependent AMR in single crystalline CoFe film could exist up to the gigahertz frequency range.