An official website of the United States government Here's how you know

Official websites use .gov

A .gov website belongs to an official government organization in the United States.

Secure .gov websites use HTTPS

A lock ( lock ) or https:// means you've safely connected to the .gov website. Share sensitive information only on official, secure websites.

Search for: All records

Creators/Authors contains: "Zhang, Yuewei"

« Prev Next »

Note: When clicking on a Digital Object Identifier (DOI) number, you will be taken to an external site maintained by the publisher. Some full text articles may not yet be available without a charge during the embargo (administrative interval).
What is a DOI Number?

Some links on this page may take you to non-federal websites. Their policies may differ from this site.

Strain and Composition Dependencies of the Near-Band-Gap Optical Transitions in Monoclinic $({Al}_{x} {Ga}_{1 - x})_{2} O_{3}$ Alloys with Coherent Biaxial In-Plane Strain on ${Ga}_{2} O_{3}$ (010)

https://doi.org/10.1103/PhysRevApplied.18.064019

Korlacki, Rafał; Hilfiker, Matthew; Knudtson, Jenna; Stokey, Megan; Kilic, Ufuk; Mauze, Akhil; Zhang, Yuewei; Speck, James; Darakchieva, Vanya; Schubert, Mathias (December 2022, Physical Review Applied)

Full Text Available
Spatially Resolved Investigation of the Bandgap Variation across a β-(Al _x Ga _1–x ) ₂ O ₃ /β-Ga ₂ O ₃ Interface by STEM–VEELS

https://doi.org/10.1021/acsaelm.1c00824

Chmielewski, Adrian; Deng, Ziling; Moradifar, Parivash; Miao, Leixin; Zhang, Yuewei; Mauze, Akhil; Lopez, Kleyser A.; Windl, Wolfgang; Alem, Nasim (February 2022, ACS Applied Electronic Materials)

Full Text Available
Dielectric function tensor (1.5 eV to 9.0 eV), anisotropy, and band to band transitions of monoclinic β -(Al _x Ga _1– _x ) ₂ O ₃ ( x ≤ 0.21) films

https://doi.org/10.1063/1.5097780

Hilfiker, Matthew; Kilic, Ufuk; Mock, Alyssa; Darakchieva, Vanya; Knight, Sean; Korlacki, Rafał; Mauze, Akhil; Zhang, Yuewei; Speck, James; Schubert, Mathias (June 2019, Applied Physics Letters)

Full Text Available
Low-pressure CVD-grown β-Ga ₂ O ₃ bevel-field-plated Schottky barrier diodes

https://doi.org/10.7567/APEX.11.031101

Joishi, Chandan; Rafique, Subrina; Xia, Zhanbo; Han, Lu; Krishnamoorthy, Sriram; Zhang, Yuewei; Lodha, Saurabh; Zhao, Hongping; Rajan, Siddharth (March 2018, Applied Physics Express)

Full Text Available
Tunnel-injected sub-260 nm ultraviolet light emitting diodes

https://doi.org/10.1063/1.4983352

Zhang, Yuewei; Krishnamoorthy, Sriram; Akyol, Fatih; Bajaj, Sanyam; Allerman, Andrew A.; Moseley, Michael W.; Armstrong, Andrew M.; Rajan, Siddharth (May 2017, Applied Physics Letters)
Reflective metal/semiconductor tunnel junctions for hole injection in AlGaN UV LEDs

https://doi.org/10.1063/1.4997328

Zhang, Yuewei; Krishnamoorthy, Sriram; Akyol, Fatih; Johnson, Jared M.; Allerman, Andrew A.; Moseley, Michael W.; Armstrong, Andrew M.; Hwang, Jinwoo; Rajan, Siddharth (July 2017, Applied Physics Letters)
Tunnel-injected sub 290 nm ultra-violet light emitting diodes with 2.8% external quantum efficiency

https://doi.org/10.1063/1.5017045

Zhang, Yuewei; Jamal-Eddine, Zane; Akyol, Fatih; Bajaj, Sanyam; Johnson, Jared M.; Calderon, Gabriel; Allerman, Andrew A.; Moseley, Michael W.; Armstrong, Andrew M.; Hwang, Jinwoo; et al (February 2018, Applied Physics Letters)