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The photophysics of silicon quantum dots (QDs) is not well understood despite their potential for many optoelectronic applications. One of the barriers to the study and widespread adoption of Si QDs is the difficulty in functionalizing their surface, to make, for example, a solution-processable electronically-active colloid. While thermal hydrosilylation of Si QDs is widely used, the high temperature typically needed may trigger undesirable side-effects, like uncontrolled polymerization of the terminal alkene. In this contribution, we show that this high-temperature method for installing aromatic and aliphatic ligands on non-thermal plasma-synthesized Si QDs can be replaced with a low-temperature, radical-initiated hydrosilylation method. Materials prepared via this low-temperature route perform similarly to those created via high-temperature thermal hydrosilylation when used in triplet fusion photon upconversion systems, suggesting the utility of low-temperature, radical-initiated methods for creating Si QDs with a range of functional behavior. 

Electronically doped metal oxide nanocrystals exhibit tunable infrared localized surface plasmon resonances (LSPRs). Despite the many benefits of IR resonant LSPRs in solution processable nanocrystals, the ways in which the electronic structure of the host semiconductor material impact metal oxide LSPRs are still being investigated. Semiconductors provide an alternative dielectric environment than metallically bonded solids, such as noble metals, which can impact how these materials undergo electronic relaxation following photoexcitation. Understanding these differences is key to developing applications that take advantage of the unique optical and electronic properties offered by plasmonic metal oxide NCs. Here, we use the two-temperature model in conjunction with femtosecond transient absorption experiments to describe how the internal temperature of two representative metal oxide nanocrystal systems, cubic WO 3−x and bixbyite Sn-doped In 2 O 3 , change following LSPR excitation. We find that the low free carrier concentrations of metal oxide NCs lead to less efficient heat generation as compared to metallic nanocrystals such as Ag. This suggests that metal oxide NCs may be ideal for applications wherein untoward heat generation may disrupt the application's overall performance, such as solar energy conversion and photonic gating.