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Title: Low temperature radical initiated hydrosilylation of silicon quantum dots
The photophysics of silicon quantum dots (QDs) is not well understood despite their potential for many optoelectronic applications. One of the barriers to the study and widespread adoption of Si QDs is the difficulty in functionalizing their surface, to make, for example, a solution-processable electronically-active colloid. While thermal hydrosilylation of Si QDs is widely used, the high temperature typically needed may trigger undesirable side-effects, like uncontrolled polymerization of the terminal alkene. In this contribution, we show that this high-temperature method for installing aromatic and aliphatic ligands on non-thermal plasma-synthesized Si QDs can be replaced with a low-temperature, radical-initiated hydrosilylation method. Materials prepared via this low-temperature route perform similarly to those created via high-temperature thermal hydrosilylation when used in triplet fusion photon upconversion systems, suggesting the utility of low-temperature, radical-initiated methods for creating Si QDs with a range of functional behavior.  more » « less
Award ID(s):
1610412
NSF-PAR ID:
10214040
Author(s) / Creator(s):
; ; ; ; ; ;
Date Published:
Journal Name:
Faraday Discussions
Volume:
222
ISSN:
1359-6640
Page Range / eLocation ID:
190 to 200
Format(s):
Medium: X
Sponsoring Org:
National Science Foundation
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