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The role of faceting and elongation on the magnetic anisotropy of magnetite Fe3O4 nanocrystals

https://doi.org/10.1038/s41598-020-58976-7

Moreno, Roberto; Poyser, Samuel; Meilak, Daniel; Meo, Andrea; Jenkins, Sarah; Lazarov, Vlado K.; Vallejo-Fernandez, Gonzalo; Majetich, Sara; Evans, Richard F. (December 2020, Scientific Reports)

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Magnetic stray fields in nanoscale magnetic tunnel junctions

https://doi.org/10.1088/1361-6463/ab4fbf

Jenkins, Sarah; Meo, Andrea; Elliott, Luke E; Piotrowski, Stephan K; Bapna, Mukund; Chantrell, Roy W; Majetich, Sara A; Evans, Richard F (January 2020, Journal of Physics D: Applied Physics)

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Magnetoresistance Dynamics in Superparamagnetic $Co − Fe − B$ Nanodots

https://doi.org/10.1103/PhysRevApplied.13.014063

Parks, Brad; Abdelgawad, Ahmed; Wong, Thomas; Evans, Richard F.L.; Majetich, Sara A. (January 2020, Physical Review Applied)

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Effect of Mo capping in sub-100 nm CoFeB-MgO tunnel junctions with perpendicular magnetic anisotropy

https://doi.org/10.1016/j.jmmm.2019.03.005

Bapna, Mukund; Parks, Brad; Oberdick, Samuel; Almasi, Hamid; Sun, Congli; Voyles, Paul; Wang, Weigang; Majetich, Sara A. (August 2019, Journal of Magnetism and Magnetic Materials)

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Spin-Orbit-Torque Switching in 20-nm Perpendicular Magnetic Tunnel Junctions

https://doi.org/10.1103/PhysRevApplied.10.024013

Bapna, Mukund; Parks, Brad; Oberdick, Samuel D.; Almasi, Hamid; Wang, Weigang; Majetich, Sara A. (August 2018, Physical Review Applied)
Current control of time-averaged magnetization in superparamagnetic tunnel junctions

https://doi.org/10.1063/1.5012091

Bapna, Mukund; Majetich, Sara A. (December 2017, Applied Physics Letters)
Superparamagnetic perpendicular magnetic tunnel junctions for true random number generators

https://doi.org/10.1063/1.5006422

Parks, Bradley; Bapna, Mukund; Igbokwe, Julianne; Almasi, Hamid; Wang, Weigang; Majetich, Sara_A (December 2017, AIP Advances)

Superparamagnetic perpendicular magnetic tunnel junctions are fabricated and analyzed for use in random number generators. Time-resolved resistance measurements are used as streams of bits in statistical tests for randomness. Voltage control of the thermal stability enables tuning the average speed of random bit generation up to 70 kHz in a 60 nm diameter device. In its most efficient operating mode, the device generates random bits at an energy cost of 600 fJ/bit. A narrow range of magnetic field tunes the probability of a given state from 0 to 1, offering a means of probabilistic computing.
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