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Award ID contains: 1740119

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  1. ; ; ; ; ; ( , Advanced Electronic Materials)
    Abstract

    A negative‐capacitance high electron mobility transistor (NC‐HEMT) with low hysteresis in the subthreshold region is demonstrated in the wide bandgap AlGaN/GaN material system using sputtered BaTiO3as a “weak” ferroelectric gate in conjunction with a conventional SiNxdielectric. An enhancement in the capacitance for BaTiO3/SiNxgate stacks is observed in comparison to control structures with SiNxgate dielectrics directly indicating the negative capacitance contribution of the ferroelectric BaTiO3layer. A significant reduction in the minimum subthreshold slope for the NC‐HEMTs is obtained in contrast to standard metal‐insulator‐semiconductor HEMTs with SiNxgate dielectrics—97.1 mV dec−1versus 145.6 mV dec−1—with almost no hysteresis in theID–VGtransfer curves. These results are promising for the integration of ferroelectric perovskite oxides with III‐Nitride devices toward NC‐field‐effect transistor switches with reduced power consumption.

     
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  2. ; ; ; ; ( , ACS Applied Electronic Materials)
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