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Lithium niobate (LN), an outstanding and versatile material, has influenced our daily life for decades—from enabling high-speed optical communications that form the backbone of the Internet to realizing radio-frequency filtering used in our cell phones. This half-century-old material is currently embracing a revolution in thin-film LN integrated photonics. The successes of manufacturing wafer-scale, high-quality thin films of LN-on-insulator (LNOI) and breakthroughs in nanofabrication techniques have made high-performance integrated nanophotonic components possible. With rapid development in the past few years, some of these thin-film LN devices, such as optical modulators and nonlinear wavelength converters, have already outperformed their legacy counterparts realized in bulk LN crystals. Furthermore, the nanophotonic integration has enabled ultra-low-loss resonators in LN, which has unlocked many novel applications such as optical frequency combs and quantum transducers. In this review, we cover—from basic principles to the state of the art—the diverse aspects of integrated thin-film LN photonics, including the materials, basic passive components, and various active devices based on electro-optics, all-optical nonlinearities, and acousto-optics. We also identify challenges that this platform is currently facing and point out future opportunities. The field of integrated LNOI photonics is advancing rapidly and poised to make critical impacts on a broad range of applications in communication, signal processing, and quantum information. 

Electrically driven acousto-optic devices that provide beam deflection and optical frequency shifting have broad applications from pulse synthesis to heterodyne detection. Commercially available acousto-optic modulators are based on bulk materials and consume Watts of radio frequency power. Here, we demonstrate an integrated 3-GHz acousto-optic frequency shifter on thin-film lithium niobate, featuring a carrier suppression over 30 dB. Further, we demonstrate a gigahertz-spaced optical frequency comb featuring more than 200 lines over a 0.6-THz optical bandwidth by recirculating the light in an active frequency shifting loop. Our integrated acousto-optic platform leads to the development of on-chip optical routing, isolation, and microwave signal processing. 

The measurement and stabilization of the carrier–envelope offset frequency $f_{\mathrm{C}\mathrm{E}\mathrm{O}}$via self-referencing is paramount for optical frequency comb generation, which has revolutionized precision frequency metrology, spectroscopy, and optical clocks. Over the past decade, the development of chip-scale platforms has enabled compact integrated waveguides for supercontinuum generation. However, there is a critical need for an on-chip self-referencing system that is adaptive to different pump wavelengths, requires low pulse energy, and does not require complicated processing. Here, we demonstrate efficient $f_{\mathrm{C}\mathrm{E}\mathrm{O}}$stabilization of a modelocked laser with only 107 pJ of pulse energy via self-referencing in an integrated lithium niobate waveguide. We realize an $f\text{-}2f$interferometer through second-harmonic generation and subsequent supercontinuum generation in a single dispersion-engineered waveguide with a stabilization performance equivalent to a conventional off-chip module. The $f_{\mathrm{C}\mathrm{E}\mathrm{O}}$beatnote is measured over a pump wavelength range of 70 nm. We theoretically investigate our system using a single nonlinear envelope equation with contributions from both second- and third-order nonlinearities. Our modeling reveals rich ultrabroadband nonlinear dynamics and confirms that the initial second-harmonic generation followed by supercontinuum generation with the remaining pump is responsible for the generation of a strong $f_{\mathrm{C}\mathrm{E}\mathrm{O}}$signal as compared to a traditional $f\text{-}2f$interferometer. Our technology provides a highly simplified system that is robust, low in cost, and adaptable for precision metrology for use outside a research laboratory. 

Integrated lithium niobate (LN) photonic circuits have recently emerged as a promising candidate for advanced photonic functions such as high-speed modulation, nonlinear frequency conversion, and frequency comb generation. For practical applications, optical interfaces that feature low fiber-to-chip coupling losses are essential. So far, the fiber-to-chip loss (commonly $>10\mathrm{dB}/\text{facet}$) has dominated the total insertion losses of typical LN photonic integrated circuits, where on-chip losses can be as low as 0.03–0.1 dB/cm. Here we experimentally demonstrate a low-loss mode size converter for coupling between a standard lensed fiber and sub-micrometer LN rib waveguides. The coupler consists of two inverse tapers that convert the small optical mode of a rib waveguide into a symmetrically guided mode of a LN nanowire, featuring a larger mode area matched to that of a tapered optical fiber. The measured fiber-to-chip coupling loss is lower than 1.7 dB/facet with high fabrication tolerance and repeatability. Our results open the door for practical integrated LN photonic circuits efficiently interfaced with optical fibers. 

Integrated lithium niobate (LN) photonic circuits have recently emerged as a promising candidate for advanced photonic functions such as high-speed modulation, nonlinear frequency conversion, and frequency comb generation. For practical applications, optical interfaces that feature low fiber-to-chip coupling losses are essential. So far, the fiber-to-chip loss (commonly >10  dB/facet) has dominated the total insertion losses of typical LN photonic integrated circuits, where on-chip losses can be as low as 0.03–0.1 dB/cm. Here we experimentally demonstrate a low-loss mode size converter for coupling between a standard lensed fiber and sub-micrometer LN rib waveguides. The coupler consists of two inverse tapers that convert the small optical mode of a rib waveguide into a symmetrically guided mode of a LN nanowire, featuring a larger mode area matched to that of a tapered optical fiber. The measured fiber-to-chip coupling loss is lower than 1.7 dB/facet with high fabrication tolerance and repeatability. Our results open the door for practical integrated LN photonic circuits efficiently interfaced with optical fibers.