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Abstract Dynamic control of patterned properties in perovskite oxide films can enable new architectures for electronic, magnetic, and optical devices. In this study, it is shown that SrFeO_3‐δ/SrFeO₂F laterally‐heterostructured films enable voltage‐controlled tunable and reversible metal‐insulator patterned properties using room‐temperature ion gel gating. Specifically, SrFeO_3‐δfilm regions can be toggled between insulating H_xSrFeO_2.5and metallic SrFeO₃by electrochemical redox, while SrFeO₂F regions remain robustly insulating and are unaffected by ion gel gating. Various gating architectures are also compared and establish the advantages of employing a conductive substrate as the contacting electrode, as opposed to at the film surface, thereby achieving complete and reversible reduction and oxidation among SrFeO_3‐δ, H_xSrFeO_2.5, and SrFeO₃. This approach to voltage‐modulated patterned electronic, optical, and magnetic properties should be broadly applicable to oxide materials amenable to fluoridation, and potentially other forms of anion substitution.