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Magnetic skyrmions are topologically nontrivial spin textures with envisioned applications in energy-efficient magnetic information storage. Toggling the presence of magnetic skyrmions via writing/deleting processes is essential for spintronics applications, which usually require the application of a magnetic field, a gate voltage or an electric current. Here we demonstrate the reversible field-free writing/deleting of skyrmions at room temperature, via hydrogen chemisorption/desorption on the surface of Ni and Co films. Supported by Monte-Carlo simulations, the skyrmion creation/annihilation is attributed to the hydrogen-induced magnetic anisotropy change on ferromagnetic surfaces. We also demonstrate the role of hydrogen and oxygen on magnetic anisotropy and skyrmion deletion on other magnetic surfaces. Our results open up new possibilities for designing skyrmionic and magneto-ionic devices.

Room‐temperature magnetic skyrmion materials exhibiting robust topological Hall effect (THE) are crucial for novel nano‐spintronic devices. However, such skyrmion‐hosting materials are rare in nature. In this study, a self‐intercalated transition metal dichalcogenide Cr_1+xTe₂with a layered crystal structure that hosts room‐temperature skyrmions and exhibits large THE is reported. By tuning the self‐intercalate concentration, a monotonic control of Curie temperature from 169 to 333 K and a magnetic anisotropy transition from out‐of‐plane to the in‐plane configuration are achieved. Based on the intercalation engineering, room‐temperature skyrmions are successfully created in Cr_1.53Te₂with a Curie temperature of 295 K and a relatively weak perpendicular magnetic anisotropy. Remarkably, a skyrmion‐induced topological Hall resistivity as large as ≈106 nΩ cm is observed at 290 K. Moreover, a sign reversal of THE is also found at low temperatures, which can be ascribed to other topological spin textures having an opposite topological charge to that of the skyrmions. Therefore, chromium telluride can be a new paradigm of the skyrmion material family with promising prospects for future device applications.

The search for efficient approaches to realize local switching of magnetic moments in spintronic devices has attracted extensive attention. One of the most promising approaches is the electrical manipulation of magnetization through electron‐mediated spin torque. However, the Joule heat generated via electron motion unavoidably causes substantial energy dissipation and potential damage to spintronic devices. Here, all‐oxide heterostructures of SrRuO₃/NiO/SrIrO₃are epitaxially grown on SrTiO₃single‐crystal substrates following the order of the ferromagnetic transition metal oxide SrRuO₃with perpendicular magnetic anisotropy, insulating and antiferromagnetic NiO, and metallic transition metal oxide SrIrO₃with strong spin–orbit coupling. It is demonstrated that instead of the electron spin torques, the magnon torques present in the antiferromagnetic NiO layer can directly manipulate the perpendicular magnetization of the ferromagnetic layer. This magnon mechanism may significantly reduce the electron motion‐related energy dissipation from electron‐mediated spin currents. Interestingly, the threshold current density to generate a sufficient magnon current to manipulate the magnetization is one order of magnitude smaller than that in conventional metallic systems. These findings suggest a route for developing highly efficient all‐oxide spintronic devices operated by magnon current.

Skyrmion helicity, which defines the spin swirling direction, is a fundamental parameter that may be utilized to encode data bits in future memory devices. Generally, in centrosymmetric ferromagnets, dipole skyrmions with helicity of −π/2 and π/2 are degenerate in energy, leading to equal populations of both helicities. On the other hand, in chiral materials where the Dzyaloshinskii–Moriya interaction (DMI) prevails and the dipolar interaction is negligible, only a preferred helicity is selected by the type of DMI. However, whether there is a rigid boundary between these two regimes remains an open question. Herein, the observation of dipole skyrmions with unconventional helicity polarization in a van der Waals ferromagnet, Fe_5−δGeTe₂, is reported. Combining magnetometry, Lorentz transmission electron microscopy, electrical transport measurements, and micromagnetic simulations, the short‐range superstructures in Fe_5−δGeTe₂resulting in a localized DMI contribution, which breaks the degeneracy of the opposite helicities and leads to the helicity polarization, is demonstrated. Therefore, the helicity feature in Fe_5−δGeTe₂is controlled by both the dipolar interaction and DMI that the former leads to Bloch‐type skyrmions with helicity of ±π/2 whereas the latter breaks the helicity degeneracy. This work provides new insights into the skyrmion topology in van der Waals materials.

Ferrimagnets have received renewed attention as a promising platform for spintronic applications. Of particular interest is the Mn4N from the ε-phase of the manganese nitride as an emergent rare-earth-free spintronic material due to its perpendicular magnetic anisotropy, small saturation magnetization, high thermal stability, and large domain wall velocity. We have achieved high-quality (001)-ordered Mn4N thin film by sputtering Mn onto η-phase Mn3N2 seed layers on Si substrates. As the deposited Mn thickness varies, nitrogen ion migration across the Mn3N2/Mn layers leads to a continuous evolution of the layers to Mn3N2/Mn2N/Mn4N, Mn2N/Mn4N, and eventually Mn4N alone. The ferrimagnetic Mn4N, indeed, exhibits perpendicular magnetic anisotropy and forms via a nucleation-and-growth mechanism. The nitrogen ion migration is also manifested in a significant exchange bias, up to 0.3 T at 5 K, due to the interactions between ferrimagnetic Mn4N and antiferromagnetic Mn3N2 and Mn2N. These results demonstrate a promising all-nitride magneto-ionic platform with remarkable tunability for device applications.