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High resolution electron backscatter diffraction (HR-EBSD) is a technique used to map elastic strain, crystallographic orientation and dislocation density in a scanning electron microscope. This review covers the background and mathematics of this technique, contextualizing it within the broader landscape of EBSD techniques and other materials characterization methods. Several case studies are presented showing the application of HR-EBSD to the study of plasticity in metals, failure analysis in microelectronics and defect quantification in thin films. This is intended to be a comprehensive resource for researchers developing this technique as well as an introduction to those wishing to apply it. 

Emerging wearable devices would benefit from integrating ductile photovoltaic light-harvesting power sources. In this work, we report a small-molecule acceptor (SMA), also known as a non–fullerene acceptor (NFA), designed for stretchable organic solar cell (s-OSC) blends with large mechanical compliance and performance. Blends of the organosilane-functionalized SMA BTP-Si4 with the polymer donor PNTB6-Cl achieved a power conversion efficiency (PCE) of >16% and ultimate strain (ε_u) of >95%. Typical SMAs suppress OSC blend ductility, but the addition of BTP-Si4 enhances it. Although BTP-Si4 is less crystalline than other SMAs, it retains considerable electron mobility and is highly miscible with PNTB6-Cl and is essential for enhancing ε_u. Thus,s-OSCs with PCE > 14% and operating normally under various deformations (>80% PCE retention under an 80% strain) were demonstrated. Analysis of several SMA-polymer blends revealed general molecular structure–miscibility–stretchability relationships for designing ductile blends. 

In this paper, in situ high-resolution electron backscattered diffraction (EBSD) is combined with concurrent atomistic-continuum (CAC) simulations to study the interactions between dislocation-mediated slip and grain boundaries (GBs) in Ni. It is found that the local stress associated with slip-GB intersections first increases upon the pileup of dislocations, then remains high even after the nucleation of dislocations in the neighboring grain, only relaxing after the nucleated dislocations propagate away from the GB due to more incoming dislocations participating in the pileup. The local stress relaxation is accompanied by an atomic-scale GB structure reconfiguration, which affects not only the subsequent dislocation transmission, but also the configuration of those dislocations away from the GB. These findings demonstrate the importance of incorporating local stress history at higher length scale models, such as crystal plasticity finite element.