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Abstract The effective quality factor of the cantilever plays a fundamental role in dynamic mode atomic force microscopy. Here we present a technique to modify the quality factor of an atomic force microscopy cantilever within a Fabry–Perot optical interferometer. The experimental setup uses two separate laser sources to detect and excite the oscillation of the cantilever. While the intensity modulation of the excitation laser drives the oscillation of the cantilever, the average intensity can be used to modify the quality factor via optomechanical force without changing the fiber-cantilever cavity length. The technique enables users to optimize the quality factor for different types of measurements without influencing the deflection measurement sensitivity. An unexpected frequency shift was observed and modelled as temperature dependence of the cantilever’s Young’s modulus, which was validated using finite element simulation. The model was used to compensate for the thermal frequency shift. The simulation provided relations between optical power, temperature, and frequency shift. 

Moiré superlattices host a rich variety of correlated electronic phases. However, the moiré potential is fixed by interlayer coupling, and it is dependent on the nature of carriers and valleys. In contrast, it has been predicted that twisted hexagonal boron nitride (hBN) layers can impose a periodic electrostatic potential capable of engineering the properties of adjacent functional layers. Here, we show that this potential is described by a theory of electric polarization originating from the interfacial charge redistribution, validated by its dependence on supercell sizes and distance from the twisted interfaces. This enables controllability of the potential depth and profile by controlling the twist angles between the two interfaces. Employing this approach, we further demonstrate how the electrostatic potential from a twisted hBN substrate impedes exciton diffusion in semiconductor monolayers, suggesting opportunities for engineering the properties of adjacent functional layers using the surface potential of a twisted hBN substrate.