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Abstract Single crystals of disordered Mn_4–xCr_xAl₁₁have been synthesized via the flux method. EDS on several crystals of various sizes and shapes revealed an average molar ratio of 17:9:74 for Mn:Cr:Al, while X-ray diffraction on three different crystals yield compositions Mn_2.26Cr_1.74Al₁₁(Mn_4–xCr_xAl₁₁,x= 1.74), Mn_0.83Cr_3.17Al₁₁, and Mn_1.07Cr_2.93Al₁₁. This compound crystallizes in space groupP–1, isostructural with both Mn₄Al₁₁and Cr₄Al₁₁. Magnetic measurements on several crystals show that this disordered compound is ferrimagnetic with a low effective moment ofμ_eff≈1.012±0.004 μ_B/f.u. and a non-reachable transition temperature. DFT calculations display opening of a bandgap in the spin-up channel near the Fermi level with increasing Cr content, an indication of half-metallicity. 

p-type Cr2MnO4 with bandgap 3.01 eV was sputter deposited onto (2¯01) and (001) n-type or semi-insulating β-Ga2O3.The heterojunction of p-type CrMnO4 on n-type Ga2O3 is found to be type II, staggered gap, i.e., the band offsets are such that both the conduction and valence band edges of Ga2O3 are lower in energy than those of the Cr2MnO4. This creates a staggered band alignment, which can facilitate the separation of photogenerated electron-hole pairs. The valence band edge of Cr2MnO4 is higher than that of Ga2O3 by 1.82–1.93 eV depending on substrate orientation and doping, which means that holes in Cr2MnO4 would have a lower energy barrier to overcome to move into Ga2O3. Conversely, the conduction band edge of Cr2MnO4 is higher than that of Ga2O3 by 0.13–0.30 eV depending on substrate doping and orientation, which would create a barrier for electrons in Ga2O3 to move into Cr2MnO4. This heterojunction looks highly promising for p-n junction formation for advanced Ga2O3-based power rectifiers.