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The nature of halogen bonding under different dielectric conditions remains underexplored, especially for inorganic systems. The structural and energetic properties of model halogen bonded complexes (R₃M−I—NH₃for R=H and F, and M=C, Si, and Ge) are examined computationally for relative permittivities between 1 and 109 using an implicit solvent model. We confirm and assess the exceptionally high maximum potentials at the sigma hole on I (V_s,max) in F₃Ge−I relative to cases where M=C or Si. In particular, Ge far outperforms Si in mediating inductive effects. Linear relationships, typically with R²>0.97, are identified betweenV_s,max, the full point charge on I in R₃M−I, and the interaction energy, and optimized I—N distance in the complexes. An anomalous trend is identified in which, for each M, F₃M−I—NH₃becomeslessstable as the optimized I—N distance getsshorterin different dielectric environments; it is explained using the F−I—NH₃complex as a reference.