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Title: Group 14 Central Atoms and Halogen Bonding in Different Dielectric Environments: How Germanium Outperforms Silicon
Abstract

The nature of halogen bonding under different dielectric conditions remains underexplored, especially for inorganic systems. The structural and energetic properties of model halogen bonded complexes (R3M−I—NH3for R=H and F, and M=C, Si, and Ge) are examined computationally for relative permittivities between 1 and 109 using an implicit solvent model. We confirm and assess the exceptionally high maximum potentials at the sigma hole on I (Vs,max) in F3Ge−I relative to cases where M=C or Si. In particular, Ge far outperforms Si in mediating inductive effects. Linear relationships, typically with R2>0.97, are identified betweenVs,max, the full point charge on I in R3M−I, and the interaction energy, and optimized I—N distance in the complexes. An anomalous trend is identified in which, for each M, F3M−I—NH3becomeslessstable as the optimized I—N distance getsshorterin different dielectric environments; it is explained using the F−I—NH3complex as a reference.

 
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Award ID(s):
2055119 0958696 2018427
NSF-PAR ID:
10292037
Author(s) / Creator(s):
 ;  ;  
Publisher / Repository:
Wiley Blackwell (John Wiley & Sons)
Date Published:
Journal Name:
ChemPlusChem
Volume:
86
Issue:
10
ISSN:
2192-6506
Page Range / eLocation ID:
p. 1387-1396
Format(s):
Medium: X
Sponsoring Org:
National Science Foundation
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