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Abstract The pursuit of smaller, energy‐efficient devices drives the exploration of electromechanically active thin films (<1 µm) to enable micro‐ and nano‐electromechanical systems. While the electromechanical response of such films is limited by substrate‐induced mechanical clamping, large electromechanical responses in antiferroelectric and multilayer thin‐film heterostructures have garnered interest. Here, multilayer thin‐film heterostructures based on antiferroelectric PbHfO₃and ferroelectric PbHf_1‐xTi_xO₃overcome substrate clamping to produce electromechanical strains >4.5%. By varying the chemistry of the PbHf_1‐xTi_xO₃layer (x = 0.3‐0.6) it is possible to alter the threshold field for the antiferroelectric‐to‐ferroelectric phase transition, reducing the field required to induce the onset of large electromechanical response. Furthermore, varying the interface density (from 0.008 to 3.1 nm⁻¹) enhances the electrical‐breakdown field by >450%. Attaining the electromechanical strains does not necessitate creating a new material with unprecedented piezoelectric coefficients, but developing heterostructures capable of withstanding large fields, thus addressing traditional limitations of thin‐film piezoelectrics. 

Abstract The Rashba effect enables control over the spin degree of freedom, particularly in polar materials where the polar symmetry couples to Rashba‐type spin splitting. The exploration of this effect, however, has been hindered by the scarcity of polar materials exhibiting the bulk‐Rashba effect and rapid spin‐relaxation effects dictated by the D'yakonov–Perel mechanism. Here, a polar LiNbO₃‐typeR3cphase of Bi_1‐xIn_1+xO₃withx≈0.15–0.24 is stabilized via epitaxial growth, which exhibits a bulk‐Rashba effect with suppressed spin relaxation as a result of its unidirectional spin texture. As compared to the previously observed non‐polarPnmaphase, this polar phase exhibits higher conductivity, reduced bandgap, and enhanced dielectric and piezoelectric responses. Combining first‐principles calculations and multimodal magnetotransport measurements, which reveal weak (anti)localization, anisotropic magnetoresistance, planar‐Hall effect, and nonreciprocal charge transport, a bulk‐Rashba effect without rapid spin relaxation is demonstrated. These findings offer insights into spin‐orbit coupling physics within polar oxides and suggest potential spintronic applications. 

Abstract The dielectric gap between the scanning probe microscopy (SPM) tip and the surface of a ferroelectric using conductive atomic force microscopy and piezoresponse force microscopy (PFM) is investigated. While the gap functions as a dielectric layer, it also allows tunneling current to inject charges into the ferroelectric when a critical loading force between 10–20 µN is applied to a tip with a radius of 25 nm under a bias voltage of 0.5 V. It is observed that the permittivity of the dielectric gap determines the coercive voltage measured by the piezoresponse hysteresis loop. While such studies done in air often produce coercive voltages much larger than those studied for the same materials in capacitor‐based studies, the use of high permittivity media such as water (ɛ_r= 79) or silicone oil (ɛ_r= 2.1‐2.8) produces coercive fields that more closely match those measured in conventional capacitor‐based polarization hysteresis loop measurements. Furthermore, using water as a dielectric medium in PFM imaging enhances the accuracy in extracting the amplitude and phase data from periodically poled lithium niobate crystals. These findings provide insight into the nanoscale phenomena of polarization switching instigated by the SPM tip and provide a pathway to improved quantitative studies. 

Abstract The discovery of polar vortices and skyrmions in ferroelectric‐dielectric superlattices [such as (PbTiO₃)_n/(SrTiO₃)_n] has ushered in an era of novel dipolar topologies and corresponding emergent phenomena. The key to creating such emergent features has generally been considered to be related to counterpoising strongly polar and non‐polar materials thus creating the appropriate boundary conditions. This limits the utility these materials can have, however, by rendering (effectively) half of the structure unresponsive to applied stimuli. Here, using advanced thin‐film deposition and an array of characterization and simulation approaches, polar vortices are realized in all‐ferroelectric trilayers, multilayers, and superlattices built from the fundamental building block of (PbTiO₃)_n/(Pb_xSr_1−xTiO₃)_nwherein in‐plane ferroelectric polarization in the Pb_xSr_1−xTiO₃provides the appropriate boundary conditions. These superlattices exhibit substantially enhanced electromechanical and ferroelectric responses in the out‐of‐plane direction that arise from the ability of the polarization in both layers to rotate to the out‐of‐plane direction under field. In the in‐plane direction, the layers are found to be strongly coupled during switching and when heterostructured with ferroelectric‐dielectric building blocks, it is possible to produce multistate switching. This approach expands the realm of systems supporting emergent dipolar texture formation and does so with entirely ferroelectric materials thus greatly improving their responses. 

Abstract Complex‐oxide superlattices provide a pathway to numerous emergent phenomena because of the juxtaposition of disparate properties and the strong interfacial interactions in these unit‐cell‐precise structures. This is particularly true in superlattices of ferroelectric and dielectric materials, wherein new forms of ferroelectricity, exotic dipolar textures, and distinctive domain structures can be produced. Here, relaxor‐like behavior, typically associated with the chemical inhomogeneity and complexity of solid solutions, is observed in (BaTiO₃)_n/(SrTiO₃)_n(n= 4–20 unit cells) superlattices. Dielectric studies and subsequent Vogel–Fulcher analysis show significant frequency dispersion of the dielectric maximum across a range of periodicities, with enhanced dielectric constant and more robust relaxor behavior for smaller periodn. Bond‐valence molecular‐dynamics simulations predict the relaxor‐like behavior observed experimentally, and interpretations of the polar patterns via 2D discrete‐wavelet transforms in shorter‐period superlattices suggest that the relaxor behavior arises from shape variations of the dipolar configurations, in contrast to frozen antipolar stripe domains in longer‐period superlattices (n= 16). Moreover, the size and shape of the dipolar configurations are tuned by superlattice periodicity, thus providing a definitive design strategy to use superlattice layering to create relaxor‐like behavior which may expand the ability to control desired properties in these complex systems. 

Abstract Spin‐state transitions are an important research topic in complex oxides with the diverse magnetic states involved. In particular, the low‐spin to high‐spin transition in LaCoO₃thin films has drawn a wide range of attention due to the emergent ferromagnetic state. Although various mechanisms (e.g., structural distortion, oxygen‐vacancy formation, spin‐state ordering) have been proposed, an understanding of what really underlies the emergent ferromagnetism remains elusive. Here, the ferromagnetism in LaCoO₃thin films is systematically modulated by varying the oxygen pressure during thin‐film growth. Although the samples show dramatic different magnetization, their cobalt valence state and perovskite crystalline structure remain almost unchanged, ruling out the scenarios of both oxygen‐vacancy and spin‐ordering. This work provides compelling evidence that the tetragonal distortion due to the tensile strain significantly modifies the orbital occupancy, leading to a low‐spin to high‐spin transition with emergent ferromagnetism, while samples grown at reduced pressure demonstrate a pronounced lattice expansion due to cation‐off‐stoichiometry, which suppresses the tetragonal distortion and the consequent magnetization. This result not only provides important insight for the understanding of exotic ferromagnetism in LaCoO₃thin films, but also identifies a promising strategy to design electronic states in complex oxides through cation‐stoichiometry engineering. 

Abstract Over the last 30 years, the study of ferroelectric oxides has been revolutionized by the implementation of epitaxial‐thin‐film‐based studies, which have driven many advances in the understanding of ferroelectric physics and the realization of novel polar structures and functionalities. New questions have motivated the development of advanced synthesis, characterization, and simulations of epitaxial thin films and, in turn, have provided new insights and applications across the micro‐, meso‐, and macroscopic length scales. This review traces the evolution of ferroelectric thin‐film research through the early days developing understanding of the roles of size and strain on ferroelectrics to the present day, where such understanding is used to create complex hierarchical domain structures, novel polar topologies, and controlled chemical and defect profiles. The extension of epitaxial techniques, coupled with advances in high‐throughput simulations, now stands to accelerate the discovery and study of new ferroelectric materials. Coming hand‐in‐hand with these new materials is new understanding and control of ferroelectric functionalities. Today, researchers are actively working to apply these lessons in a number of applications, including novel memory and logic architectures, as well as a host of energy conversion devices. 

Abstract Epitaxial strain has been shown to produce dramatic changes to the orbital structure in transition metal perovskite oxides and, in turn, the rate of oxygen electrocatalysis therein. Here, epitaxial strain is used to investigate the relationship between surface electronic structure and oxygen electrocatalysis in prototypical fuel cell cathode systems. Combining high‐temperature electrical‐conductivity‐relaxation studies and synchrotron‐based X‐ray absorption spectroscopy studies of La_0.5Sr_0.5CoO₃and La_0.8Sr_0.2Co_0.2Fe_0.8O₃thin films under varying degrees of epitaxial strain reveals a strong correlation between orbital structure and catalysis rates. In both systems, films under biaxial tensile strain simultaneously exhibit the fastest reaction kinetics and lowest electron occupation in thed_z²orbitals. These results are discussed in the context of broader chemical trends and electronic descriptors are proposed for oxygen electrocatalysis in transition metal perovskite oxides. 

Pattern formation in spin systems with continuous-rotational symmetry (CRS) provides a powerful platform to study emergent complex magnetic phases and topological defects in condensed-matter physics. However, its understanding and correlation with unconventional magnetic order along with high-resolution nanoscale imaging are challenging. Here, we employ scanning nitrogen vacancy (NV) magnetometry to unveil the morphogenesis of spin cycloids at both the local and global scales within a single ferroelectric domain of (111)-oriented BiFeO₃, which is a noncollinear antiferromagnet, resulting in formation of a glassy labyrinthine pattern. We find that the domains of locally oriented cycloids are interconnected by an array of topological defects and exhibit isotropic energy landscape predicted by first-principles calculations. We propose that the CRS of spin-cycloid propagation directions within the (111) drives the formation of the labyrinthine pattern and the associated topological defects such as antiferromagnetic skyrmions. Unexpectedly, reversing the as-grown ferroelectric polarization from [ $\stackrel{ ¯}{1}$ $\overline{1}$ $\overline{1}$] to [111] produces a noncycloidal NV image contrast which could be attributed to either the emergence of a uniformly magnetized state or a reversal of the cycloid polarity. These findings highlight that (111)-oriented BiFeO₃is not only important for studying the fascinating subject of pattern formation but could also be utilized as an ideal platform for integrating novel topological defects in the field of antiferromagnetic spintronics.