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Abstract Charge density wave (CDW) ordering has been an important topic of study for a long time owing to its connection with other exotic phases such as superconductivity and magnetism. The$$R{\textrm{Te}}_{3}$$ $R{\text{Te}}_3$(R= rare-earth elements) family of materials provides a fertile ground to study the dynamics of CDW in van der Waals layered materials, and the presence of magnetism in these materials allows to explore the interplay among CDW and long range magnetic ordering. Here, we have carried out a high-resolution angle-resolved photoemission spectroscopy (ARPES) study of a CDW material$${\textrm{Gd}}{\textrm{Te}}_{3}$$ $\text{Gd}{\text{Te}}_3$, which is antiferromagnetic below$$\sim \mathrm {12~K}$$ $\sim 12K$, along with thermodynamic, electrical transport, magnetic, and Raman measurements. Our ARPES data show a two-fold symmetric Fermi surface with both gapped and ungapped regions indicative of the partial nesting. The gap is momentum dependent, maximum along$${\overline{\Gamma }}-\mathrm{\overline{Z}}$$ $\overline{\Gamma }-\overline{Z}$and gradually decreases going towards$${\overline{\Gamma }}-\mathrm{\overline{X}}$$ $\overline{\Gamma }-\overline{X}$. Our study provides a platform to study the dynamics of CDW and its interaction with other physical orders in two- and three-dimensions. 

Abstract Niobium chloride (Nb₃Cl₈) is a layered two-dimensional semiconducting material with many exotic properties including a breathing kagome lattice, a topological flat band in its band structure, and a crystal structure that undergoes a structural and magnetic phase transition at temperatures below 90 K. Despite being a remarkable material with fascinating new physics, the understanding of its phonon properties is at its infancy. In this study, we investigate the phonon dynamics of Nb₃Cl₈in bulk and few layer flakes using polarized Raman spectroscopy and density-functional theory (DFT) analysis to determine the material’s vibrational modes, as well as their symmetrical representations and atomic displacements. We experimentally resolved 12 phonon modes, five of which areA_1gmodes while the remaining seven areE_gmodes, which is in strong agreement with our DFT calculation. Layer-dependent results suggest that the Raman peak positions are mostly insensitive to changes in layer thickness, while peak intensity and full width at half maximum are affected. Raman measurements as a function of excitation wavelength (473–785 nm) show a significant increase of the peak intensities when using a 473 nm excitation source, suggesting a near resonant condition. Temperature-dependent Raman experiments carried out above and below the transition temperature did not show any change in the symmetries of the phonon modes, suggesting that the structural phase transition is likely from the high temperatureP $\overline{\text{3}m}$1 phase to the low-temperatureR $\overline{3m}$phase. Magneto-Raman measurements carried out at 140 and 2 K between −2 and 2 T show that the Raman modes are not magnetically coupled. Overall, our study presented here significantly advances the fundamental understanding of layered Nb₃Cl₈material which can be further exploited for future applications. 

The etching of ZnO thin films using acetylacetone (Hacac) doses with long exposure times, followed by purging and subsequent exposure to O2 plasma, is studied in a hot-wall reactor using simultaneous in situ spectroscopic ellipsometry and quadrupole mass spectrometry. The static exposure step results in the efficient consumption of Hacac. For each etch cycle, the O2 plasma plays a crucial role in removing unreacted Hacac from the ZnO surface, priming the surface for subsequent Hacac etching. This is confirmed by the production of CO2 during the O2 plasma pulse. The temperature window for etching is established as 220–280 °C with a maximum etch per cycle (EPC) of 0.15 nm/cy. Under these conditions, the Hacac pulse is 2 s long with a 30 s static hold step followed by 5 s O2 plasma step at 300 W power. Statistical analyses of etch data at the granularity level of each cycle reveal the importance of the static hold step in determining EPC. Arrhenius behavior of etching during the hold step reveals a piecewise linear trend with a low temperature (120–200 °C) activation energy (Ea) of 202 meV and a high temperature (200–320 °C) Ea of 32 meV. It is shown that saturation behavior in EPC is pulse time and static hold time dependent. Shorter Hacac pulses (≤1 s) demonstrate saturation behavior for static hold times ∼30 s, longer pulses of Hacac (≥2 s) show no saturation in EPC with static hold times up to 75 s. 

In depth thermogravimetric analysis and direct comparison of commercial volatile molecular tungsten-based precursors for atomic layer deposition. 

Real-time detection of intermediate species and final products at the surface and near-surface in interfacial solid–gas reactions is critical for an accurate understanding of heterogeneous reaction mechanisms. In this article, an experimental method that can simultaneously monitor the ultrafast dynamics at the surface and above the surface in photoinduced heterogeneous reactions is presented. This method relies on a combination of mass spectrometry and femtosecond pump–probe spectroscopy. As a model system, the photoinduced reaction of methyl iodide on and above a cerium oxide surface is investigated. The species that are simultaneously detected from the surface and gas-phase present distinct features in the mass spectra, such as a sharp peak followed by an adjacent broad shoulder. The sharp peak is attributed to the species detected from the surface, while the broad shoulder is due to the detection of gas-phase species above the surface, as confirmed by multiple experiments. By monitoring the evolution of the sharp peak and broad shoulder as a function of the pump–probe time delay, transient signals are obtained that describe the ultrafast photoinduced reaction dynamics of methyl iodide on the surface and in the gas-phase. Finally, SimION simulations are performed to confirm the origin of the ions produced on the surface and in the gas-phase. 

Atomic layer deposition (ALD) of ruthenium (Ru) is being investigated for next generation interconnects and conducting liners for copper metallization. However, integration of ALD Ru with diffusion barrier refractory metal nitrides, such as tantalum nitride (TaN), continues to be a challenge due to its slow nucleation rates. Here, we demonstrate that an ultraviolet-ozone (UV-O3) pretreatment of TaN leads to an oxidized surface that favorably alters the deposition characteristics of ALD Ru from islandlike to layer-by-layer growth. The film morphology and properties are evaluated via spectroscopic ellipsometry, atomic force microscopy, electrical sheet resistance measurements, and thermoreflectance. We report a 1.83 nm continuous Ru film with a roughness of 0.19 nm and a sheet resistance of 10.8 KΩ/□. The interface chemistry between TaN and Ru is studied by x-ray photoelectron spectroscopy. It is shown that UV-O3 pretreatment, while oxidizing TaN, enhances Ru film nucleation and limits further oxidation of the underlying TaN during ALD. An oxygen “gettering” mechanism by TaN is proposed to explain reduced oxygen content in the Ru film and higher electrical conductivity compared to Ru deposited on native-TaN. This work provides a simple and effective approach using UV-O3 pretreatment for obtaining sub-2 nm, smooth, and conducting Ru films on TaN surfaces.