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Abstract Noncollinear ferroic materials are sought after as testbeds to explore the intimate connections between topology and symmetry, which result in electronic, optical, and magnetic functionalities not observed in collinear ferroic materials. For example, ferroaxial materials have rotational structural distortions that break mirror symmetry and induce chirality. When ferroaxial order is coupled with ferroelectricity arising from a broken inversion symmetry, it offers the prospect of electric‐field‐control of the ferroaxial distortions and opens up new tunable functionalities. However, chiral multiferroics, especially ones stable at room temperature, are rare. A strain‐stabilized, room‐temperature chiral multiferroic phase in single crystals of BaTiS₃is reported here. Using first‐principles calculations, the stabilization of this multiferroic phase havingP6₃space group for biaxial tensile strains exceeding 1.5% applied on the basalab‐plane of the room temperatureP6₃cmphase of BaTiS₃is predicted. The chiral multiferroic phase is characterized by rotational distortions of TiS₆octahedra around the longc‐axis and polar displacement of Ti atoms along thec‐axis. The ferroaxial and ferroelectric distortions and their domains inP6₃‐BaTiS₃are directly resolved using atomic resolution scanning transmission electron microscopy. Landau‐based phenomenological modeling predicts a strong coupling between the ferroelectric and the ferroaxial order makingP6₃‐BaTiS₃an attractive test bed for achieving electric‐field‐control of chirality. 

Abstract A key open question in the study of layered superconducting nickelate films is the role that hydrogen incorporation into the lattice plays in the appearance of the superconducting state. Due to the challenges of stabilizing highly crystalline square planar nickelate films, films are prepared by the deposition of a more stable parent compound which is then transformed into the target phaseviaa topotactic reaction with a strongly reducing agent such as CaH₂. Recent studies, both experimental and theoretical, have introduced the possibility that the incorporation of hydrogen from the reducing agent into the nickelate lattice may be critical for the superconductivity. In this work, we use secondary ion mass spectrometry to examine superconducting La_1−xX_xNiO₂/ SrTiO₃(X= Ca and Sr) and Nd₆Ni₅O₁₂/ NdGaO₃films, along with non-superconducting NdNiO₂/ SrTiO₃and (Nd,Sr)NiO₂/ SrTiO₃. We find no evidence for extensive hydrogen incorporation across a broad range of samples, including both superconducting and non-superconducting films. Theoretical calculations indicate that hydrogen incorporation is broadly energetically unfavorable in these systems, supporting our conclusion that extensive hydrogen incorporation is not generally required to achieve a superconducting state in layered square-planar nickelates. 

Abstract BaTiS₃, a quasi-1D complex chalcogenide, has gathered considerable scientific and technological interest due to its giant optical anisotropy and electronic phase transitions. However, the synthesis of high-quality BaTiS₃crystals, particularly those featuring crystal sizes of millimeters or larger, remains a challenge. Here, we investigate the growth of BaTiS₃crystals utilizing a molten salt flux of either potassium iodide, or a mixture of barium chloride and barium iodide. The crystals obtained through this method exhibit a substantial increase in volume compared to those synthesized via the chemical vapor transport method, while preserving their intrinsic optical and electronic properties. Our flux growth method provides a promising route toward the production of high-quality, large-scale single crystals of BaTiS₃, which will greatly facilitate advanced characterizations of BaTiS₃and its practical applications that require large crystal dimensions. Additionally, our approach offers an alternative synthetic route for other emerging complex chalcogenides. Graphical Abstract 

Abstract Polarimetric infrared (IR) detection bolsters IR thermography by leveraging the polarization of light. Optical anisotropy, i.e., birefringence and dichroism, can be leveraged to achieve polarimetric detection. Recently, giant optical anisotropy is discovered in quasi‐1D narrow‐bandgap hexagonal perovskite sulfides, A_1+xTiS₃, specifically BaTiS₃and Sr_9/8TiS₃. In these materials, the critical role of atomic‐scale structure modulations in the unconventional electrical, optical, and thermal properties raises the broader question of the nature of other materials that belong to this family. To address this issue, for the first time, high‐quality single crystals of a largely unexplored member of the A_1+xTiX₃(X = S, Se) family, BaTiSe₃are synthesized. Single‐crystal X‐ray diffraction determined the room‐temperature structure with theP31cspace group, which is a superstructure of the earlier reportedP6₃/mmcstructure. The crystal structure of BaTiSe₃features antiparallelc‐axis displacements similar to but of lower symmetry than BaTiS₃, verified by the polarization dependent Raman spectroscopy. Fourier transform infrared (FTIR) spectroscopy is used to characterize the optical anisotropy of BaTiSe₃, whose refractive index along the ordinary (E⊥c) and extraordinary (E‖c) optical axes is quantitatively determined by combining ellipsometry studies with FTIR. With a giant birefringence Δn∼ 0.9, BaTiSe₃emerges as a new candidate for miniaturized birefringent optics for mid‐wave infrared to long‐wave infrared imaging. 

Abstract Vapor‐pressure mismatched materials such as transition metal chalcogenides have emerged as electronic, photonic, and quantum materials with scientific and technological importance. However, epitaxial growth of vapor‐pressure mismatched materials are challenging due to differences in the reactivity, sticking coefficient, and surface adatom mobility of the mismatched species constituting the material, especially sulfur containing compounds. Here, a novel approach is reported to grow chalcogenides—hybrid pulsed laser deposition—wherein an organosulfur precursor is used as a sulfur source in conjunction with pulsed laser deposition to regulate the stoichiometry of the deposited films. Epitaxial or textured thin films of sulfides with variety of structure and chemistry such as alkaline metal chalcogenides, main group chalcogenides, transition metal chalcogenides, and chalcogenide perovskites are demonstrated, and structural characterization reveal improvement in thin film crystallinity, and surface and interface roughness compared to the state‐of‐the‐art. The growth method can be broadened to other vapor‐pressure mismatched chalcogenides such as selenides and tellurides. This work opens up opportunities for broader epitaxial growth of chalcogenides, especially sulfide‐based thin film technological applications. 

Abstract Phase change materials, which show different electrical characteristics across the phase transitions, have attracted considerable research attention for their potential electronic device applications. Materials with metal‐to‐insulator or charge density wave (CDW) transitions such as VO₂and 1T‐TaS₂have demonstrated voltage oscillations due to their robust bi‐state resistive switching behavior with some basic neuronal characteristics. BaTiS₃is a small bandgap ternary chalcogenide that has recently reported the emergence of CDW order below 245 K. Here, the discovery of DC voltage / current‐induced reversible threshold switching in BaTiS₃devices between a CDW phase and a room temperature semiconducting phase is reported. The resistive switching behavior is consistent with a Joule heating scheme and sustained voltage oscillations with a frequency of up to 1 kHz are demonstrated by leveraging the CDW phase transition and the associated negative differential resistance. Strategies of reducing channel sizes and improving thermal management may further improve the device's performance. The findings establish BaTiS₃as a promising CDW material for future electronic device applications, especially for energy‐efficient neuromorphic computing. 

Abstract It is shown that structural disorder—in the form of anisotropic, picoscale atomic displacements—modulates the refractive index tensor and results in the giant optical anisotropy observed in BaTiS₃, a quasi‐1D hexagonal chalcogenide. Single‐crystal X‐ray diffraction studies reveal the presence of antipolar displacements of Ti atoms within adjacent TiS₆chains along thec‐axis, and threefold degenerate Ti displacements in thea–bplane.^47/49Ti solid‐state NMR provides additional evidence for those Ti displacements in the form of a three‐horned NMR lineshape resulting from a low symmetry local environment around Ti atoms. Scanning transmission electron microscopy is used to directly observe the globally disordered Tia–bplane displacements and find them to be ordered locally over a few unit cells. First‐principles calculations show that the Tia–bplane displacements selectively reduce the refractive index along theab‐plane, while having minimal impact on the refractive index along the chain direction, thus resulting in a giant enhancement in the optical anisotropy. By showing a strong connection between structural disorder with picoscale displacements and the optical response in BaTiS₃, this study opens a pathway for designing optical materials with high refractive index and functionalities such as large optical anisotropy and nonlinearity. 

Abstract As one of the most fundamental physical phenomena, charge density wave (CDW) order predominantly occurs in metallic systems such as quasi‐1D metals, doped cuprates, and transition metal dichalcogenides, where it is well understood in terms of Fermi surface nesting and electron–phonon coupling mechanisms. On the other hand, CDW phenomena in semiconducting systems, particularly at the low carrier concentration limit, are less common and feature intricate characteristics, which often necessitate the exploration of novel mechanisms, such as electron–hole coupling or Mott physics, to explain. In this study, an approach combining electrical transport, synchrotron X‐ray diffraction, and density‐functional theory calculations is used to investigate CDW order and a series of hysteretic phase transitions in a diluted‐band semiconductor, BaTiS₃. These experimental and theoretical findings suggest that the observed CDW order and phase transitions in BaTiS₃may be attributed to both electron–phonon coupling and non‐negligible electron–electron interactions in the system. This work highlights BaTiS₃as a unique platform to explore CDW physics and novel electronic phases in the dilute filling limit and opens new opportunities for developing novel electronic devices. 

Abstract Materials with large birefringence (Δn, wherenis the refractive index) are sought after for polarization control (e.g., in wave plates, polarizing beam splitters, etc.), nonlinear optics, micromanipulation, and as a platform for unconventional light–matter coupling, such as hyperbolic phonon polaritons. Layered 2D materials can feature some of the largest optical anisotropy; however, their use in most optical systems is limited because their optical axis is out of the plane of the layers and the layers are weakly attached. This work demonstrates that a bulk crystal with subtle periodic modulations in its structure—Sr_9/8TiS₃—is transparent and positive‐uniaxial, with extraordinary indexn_e= 4.5 and ordinary indexn_o= 2.4 in the mid‐ to far‐infrared. The excess Sr, compared to stoichiometric SrTiS₃, results in the formation of TiS₆trigonal‐prismatic units that break the chains of face‐sharing TiS₆octahedra in SrTiS₃into periodic blocks of five TiS₆octahedral units. The additional electrons introduced by the excess Sr form highly oriented electron clouds, which selectively boost the extraordinary indexn_eand result in record birefringence (Δn> 2.1 with low loss). The connection between subtle structural modulations and large changes in refractive index suggests new categories of anisotropic materials and also tunable optical materials with large refractive‐index modulation.