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The characteristics of the interface between DNA and metallic carbon nanotube (CNT) in supramolecular assemblies are important to understand for electronic and sensing applications. We study the mechanical stability and electronic properties of these interfaces with amino and ester linkers using computational experiments. Our study demonstrates that both linkers significantly enhance the mechanical stability of DNA–CNT systems, with the DNA adopting a stable and lower energy perpendicular orientation relative to the CNT as opposed to a conventional parallel arrangement. This lower energy configuration is driven by nonbonded interactions between the DNA base and the CNT surface. Our calculations also reveal that interface resistance is primarily governed by DNA–CNT interactions with negligible contribution from the linkers. In the case of the amino linker, we predict a 100-fold transmission ratio between parallel and perpendicular configurations of DNA relative to CNT. This observation can be used to build an electromechanical switch with fast switching times (30 ns). The ester linker, on the contrary, enables a better electronic coupling between the DNA and CNT even when strained. 

Wafer scale transition metal dichalcogenide films grown by MOCVD using two different chalcogen precursors are assessed for layer homogeneity and quality. These characteristics are then compared to electrical properties on the growth substrate. 

This paper reports the fabrication of silicon PN diode by using DNA nanostructure as the etching template for SiO₂and also as then-dopant of Si. DNA nanotubes were deposited ontop-type silicon wafer that has a thermal SiO₂layer. The DNA nanotubes catalyze the etching of SiO₂by HF vapor to expose the underlying Si. The phosphate groups in the DNA nanotube were used as the doping source to locallyn-dope the Si wafer to form vertical P-N junctions. Prototype PN diodes were fabricated and exhibited expected blockage behavior with a knee voltage ofca.0.7 V. Our work highlights the potential of DNA nanotechnology in future fabrication of nanoelectronics.