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Big Data has an insatiable appetite for larger and better-performing memory. While current memory technologies continue to advance, the performance gaps in current memory and storage technology have motivated the exploration of emerging memory technologies capable of providing new functionalities. Ferroelectric memory is one such promising candidate which has recently experienced a revival after the discovery of ferroelectricity in hafnium dioxide (HfO₂) – the dielectric of choice in advanced CMOS manufacturing. While the commercial viability of ferroelectric memory technology has made significant progress over the past decade, several challenges related to variation and reliability still stand as a barrier to large-scale commercial implementation. Here, we review some of the outstanding challenges of ferroelectric memory technology along with the recent materials and device innovations that are being considered to overcome them. Moreover, we aim to highlight these challenges as materials and device co-design problems that must be addressed through collaborative efforts that straddle the two disciplines. We identify and provide our perspective on some of the key challenges and opportunities for ferroelectric-based microelectronic technology. Ferroelectrics non-volatile memory, in-memory computation 

Thin conducting films are distinct from bulk materials and have become prevalent over the past decades as they possess unique physical, electrical, optical, and mechanical characteristics. Comprehending these essential properties for developing novel materials with tailored features for various applications is very important. Research on these conductive thin films provides us insights into the fundamental principles, behavior at different dimensions, interface phenomena, etc. This study comprehensively analyzes the intricacies of numerous commonly used thin conducting films, covering from the fundamentals to their advanced preparation methods. Moreover, the article discusses the impact of different parameters on those thin conducting films’ electronic and optical properties. Finally, the recent future trends along with challenges are also highlighted to address the direction the field is heading towards. It is imperative to review the study to gain insight into the future development and advancing materials science, thus extending innovation and addressing vital challenges in diverse technological domains. 

Pyroelectric materials are naturally electrically polarized and exhibits a built-in spontaneous polarization in their unit cell structure even in the absence of any externally applied electric field. These materials are regarded as one of the ideal detector elements for infrared applications because they have a fast response time and uniform sensitivity at room temperature across all wavelengths. Crystals of the perovskite lead titanate (PbTiO3) family show pyroelectric characteristics and undergo structural phase transitions. They have a high Curie temperature (the temperature at which the material changes from the ferroelectric (polar) to the paraelectric (nonpolar) phase), high pyroelectric coefficient, high spontaneous polarization, low dielectric constant, and constitute important component materials not only useful for infrared detection, but also with vast applications in electronic, optic, and MEMS devices. However, the preparation of large perfect and pure single crystals PbTiO3 is challenging. Additionally, difficulties arise in the application of such bulk crystals in terms of connection to processing circuits, large size, and high voltages required for their operation. In this part of the review paper, we explain the electrical behavior and characterization techniques commonly utilized to unravel the pyroelectric properties of lead titanate and its derivatives. Further, it explains how the material preparation techniques affect the electrical characteristics of resulting thin films. It also provides an in-depth discussion of the measurement of pyroelectric coefficients using different techniques. 

Pyroelectric materials, are those materials with the property that in the absence of any externally applied electric field, develop a built-in spontaneous polarization in their unit cell structure. They are regarded as ideal detector elements for infrared applications because they can provide fast response time and uniform sensitivity at room temperature over all wavelengths. Crystals of the perovskite Lead Titanate (PbTiO3) family show pyroelectric characteristics and undergo structural phase transitions. They have a high Curie temperature (the temperature at which the material changes from the ferroelectric (polar) to the paraelectric (nonpolar) phase), high pyroelectric coefficient, high spontaneous polarization, low dielectric constant, and constitute important component materials not only useful for infrared detection, but also with vast applications in electronic, optic, and Micro-electromechanical systems (MEMS) devices. However, the preparation of large perfect, and pure single crystals of PbTiO3 is challenging. Additionally, difficulties arise in the application of such bulk crystals in terms of connection to processing circuits, large size, and high voltages required for their operation. A number of thin film fabrication techniques have been proposed to overcome these inadequacies, among which, magnetron sputtering has demonstrated many potentials. By addressing these aspects, the review article aims to contribute to the understanding of the challenges in the field of pyroelectric materials, highlight potential solutions, and showcase the advancements and potentials of pyroelectric perovskite series including PbZrTiO3 (PZT), PbxCa1−x (PZN-PT), etc. for which PbTiO3 is the end member. The review is presented in two parts. Part 1 focuses on material aspects, including preparation methods using magnetron sputtering and material characterization. We take a tutorial approach to discuss the progress made in epitaxial growth of lead titanate-based ceramics prepared by magnetron sputtering and examine how processing conditions may affect the crystalline quality of the growing film by linking to the properties of the substrate/buffer layer, growth substrate temperature, and the oxygen partial pressure in the gas mixture. Careful control and optimization of these parameters are crucial for achieving high-quality thin films with desired structural and morphological characteristics.