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Abstract AB-stacked bilayer graphene has emerged as a fascinating yet simple platform for exploring macroscopic quantum phenomena of correlated electrons. Under large electric displacement fields and near low-density van-Hove singularities, it exhibits a phase with features consistent with Wigner crystallization, including negative dR/dT and nonlinear bias behavior. However, direct evidence for the emergence of an electron crystal at zero magnetic field remains elusive. Here, we explore low-frequency noise consistent with depinning and sliding of a Wigner crystal or solid. At large magnetic fields, we observe enhanced noise at low bias current and a frequency-dependent response characteristic of depinning and sliding, consistent with earlier scanning tunnelling microscopy studies confirming Wigner crystallization in the fractional quantum Hall regime. At zero magnetic field, we detect pronounced AC noise whose peak frequency increases linearly with applied DC current—indicative of collective electron motion. These transport signatures pave the way toward confirming an anomalous Hall crystal. 

Abstract Spin-orbit coupling (SOC) and electron-electron interaction can mutually influence each other and give rise to a plethora of intriguing phenomena in condensed matter systems. In pristine bilayer graphene (BLG), which has weak SOC, intrinsic Lifshitz transitions and concomitant van-Hove singularities lead to the emergence of many-body correlated phases. Layer-selective SOC can be proximity induced by adding a layer of tungsten diselenide (WSe₂) on its one side. By applying an electric displacement field, the system can be tuned across a spectrum wherein electronic correlation, SOC, or a combination of both dominates. Our investigations reveal an intricate phase diagram of proximity-induced SOC-selective BLG. Not only does this phase diagram include those correlated phases reminiscent of SOC-free doped BLG, but it also hosts unique SOC-induced states allowing a compelling measurement of valleyg-factor and a correlated insulator at charge neutrality, thereby showcasing the remarkable tunability of the interplay between interaction and SOC in WSe₂enriched BLG. 

Abstract Terahertz (THz) technology is critical for quantum material physics, biomedical imaging, ultrafast electronics, and next‐generation wireless communications. However, standing in the way of widespread applications is the scarcity of efficient ultrafast THz sources with on‐demand fast modulation and easy on‐chip integration capability. Here the discovery of colossal THz emission is reported from a van der Waals (vdW) ferroelectric semiconductor NbOI₂. Using THz emission spectroscopy, a THz generation efficiency an order of magnitude higher than that of ZnTe, a standard nonlinear crystal for ultrafast THz generation is observed. The underlying generation mechanisms associated are further uncovered with its large ferroelectric polarization by studying the THz emission dependence on excitation wavelength, incident polarization, and fluence. Moreover, the ultrafast coherent amplification and annihilation of the THz emission and associated coherent phonon oscillations by employing a double‐pump scheme are demonstrated. These findings combined with first‐principles calculations, inform a new understanding of the THz light–matter interaction in emergent vdW ferroelectrics and pave the way to develop high‐performance THz devices on them for quantum materials sensing and ultrafast electronics. 

In this Article, we explore how the chemical pressure (CP) features of an intermetallic phase may provide opportunities to couple perturbations in electron count with the stabilization of the underlying geometrical structure. AuCu3‐type LnGa3 (Ln = lanthanide or group 3 metal) phases contain octahedral cavities of negative CP held open by overly compressed Ln–Ga interactions, leading to a series of transition metal‐stuffed derivatives. We present new additions to this family with the synthesis and crystal structures of Dy4T1−xGa12 with (T, x) = (Ag, 0.29) and (Ir, 0.15), adopting Y4PdGa12‐type superstructures of the AuCu3‐type. Density Functional Theory (DFT)‐CP calculations, when adjusted to avoid dipolar CP features, affirm that T atom incorporation provides a mechanism for the relief of packing tensions, while electronic density of states distributions illustrate that the T atoms serve largely as electron or hole donors to the band structure, as needed for them to attain d10 configurations. The maximum obtainable value for x may be limited by a mismatch between the Fermi energy and pseudogap, in line with the balance of factors envisioned by the frustrated and allowed structural transitions principle. Trends in resistivity measurements on T = Ir, Pd, and Ag compounds are interpretable in terms of the varying degrees of disorder arising from x< 1.0. 

Intertwined orders appear when multiple orders are strongly interacting, and kagome metals have emerged as new platforms to explore exotic phases. FeGe has been found to develop a charge density wave (CDW) order within magnetic phase, suggesting an intricate interplay of the lattice, charge, and spin degrees of freedom. Recently, postgrowth annealing has been proposed to tune the CDW order from long-range to complete suppression, offering a tuning knob for the CDW order. Here, by comparing the electronic structures of FeGe subjected to different annealing conditions and distinct CDW properties, we report spectral evolution associated with the lattice and spin degrees of freedom. We find band evolution linked to a spin density wave (SDW) order present in both samples with and without CDW order, and another evolution connected to the lattice distortions that onset with the long-range CDW order and revert with the SDW order. Our results reveal a rare competitive cooperation of the lattice, spin, and charge in FeGe.