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ABSTRACT Extreme magnetoresistance (XMR) is a phenomenon characterized by an increase in resistance by factors of 10⁴–10⁷% when a magnetic field is applied. This phenomenon is found in a number of semimetals such as WTe₂, PtSn₄, Cd₃As₂, and LaSb. The origin of XMR is still hotly debated, possibly with different materials having different (or multiple) explanations. Extreme transverse magnetoresistance of up to 8000% at 14 T and 1.8 K is measured in TiZn₁₆, a semimetal with a multitude of bands crossing the Fermi energy, akin to PtSn₄. The magnetoresistance is suppressed when the magnetic field is rotated to be parallel to the applied current, similar to PtSn₄and PdSn₄. The resistance of TiZn₁₆follows Kohler's rule, but displays different behavior under an applied transverse field and under a longitudinal magnetic field, suggesting distinct electrical phases. Also present are Shubnikov‐de Haas and de Haas‐van Alphen oscillations with a transverse magnetic field up to 43 T, showing that despite an insulator‐like temperature‐resistance curve, charge carriers are still present. This positions TiZn₁₆as an interesting addition to the investigation of XMR materials as a multi‐band metal with complex Fermi surface geometries. 

Uniaxial stress has proven to be a powerful experimental tuning parameter for effectively controlling lattice, charge, orbital, and spin degrees of freedom in quantum materials. In addition, its ability to manipulate the symmetry of materials has garnered significant attention. Recent technical progress to combine uniaxial stress cells with quantum oscillation and angle-resolved photoemission techniques allowed to study the electronic structure as function of uniaxial stress. This review provides an overview on experimental advancements in methods and examines studies on diverse quantum materials, encompassing the semimetal WTe₂, the unconventional superconductor Sr₂RuO₄, Fe-based superconductors, and topological materials.