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Award ID contains: 2404862

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  1. ; ; ; (, IEEE Transactions on Nuclear Science)
    This peer-reviewed publication documents the development of Cr/4H-SiC Schottky barrier diodes with high built-in potential (2.2 V), Schottky barrier height (1.14 eV), and exceptional energy resolution (0.5% for 5.486 MeV alpha particles) and compares them with those obtained from devices with conventional metals such as Ni, Mo, and Pd. This work directly corresponds to Tasks 1 and 2 of the project, particularly in exploring alternative metal contacts for enhanced device performance under extreme conditions. It also provides key performance benchmarks for evaluating contact properties that will feed into Task 4, where charge transport behavior is analyzed under irradiation. 
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    Free, publicly-accessible full text available April 1, 2026