Wang, Tianqi, Pitike, Krishna Chaitanya, Yuan, Yakun, Nakhmanson, Serge M., Gopalan, Venkatraman, and Jalan, Bharat. Chemistry, growth kinetics, and epitaxial stabilization of Sn2+ in Sn-doped SrTiO3 using (CH3)6Sn2 tin precursor. APL Materials 4.12 Web. doi:10.1063/1.4972995.

Wang, Tianqi, Pitike, Krishna Chaitanya, Yuan, Yakun, Nakhmanson, Serge M., Gopalan, Venkatraman, & Jalan, Bharat. Chemistry, growth kinetics, and epitaxial stabilization of Sn2+ in Sn-doped SrTiO3 using (CH3)6Sn2 tin precursor. APL Materials, 4 (12). https://doi.org/10.1063/1.4972995

Wang, Tianqi, Pitike, Krishna Chaitanya, Yuan, Yakun, Nakhmanson, Serge M., Gopalan, Venkatraman, and Jalan, Bharat. "Chemistry, growth kinetics, and epitaxial stabilization of Sn2+ in Sn-doped SrTiO3 using (CH3)6Sn2 tin precursor". APL Materials 4 (12). United States: American Institute of Physics. https://doi.org/10.1063/1.4972995. https://par.nsf.gov/biblio/10022012.

@article{osti_10022012,
place = {United States}, title = {Chemistry, growth kinetics, and epitaxial stabilization of Sn2+ in Sn-doped SrTiO3 using (CH3)6Sn2 tin precursor}, url = {https://par.nsf.gov/biblio/10022012}, DOI = {10.1063/1.4972995}, abstractNote = {Not Available}, journal = {APL Materials}, volume = {4}, number = {12}, publisher = {American Institute of Physics}, author = {Wang, Tianqi and Pitike, Krishna Chaitanya and Yuan, Yakun and Nakhmanson, Serge M. and Gopalan, Venkatraman and Jalan, Bharat}, }