The highest ambient‐pressure Tc among binary compounds is 40 K (MgB2). Higher Tc is achieved in high‐pressure hydrides or multielement cuprates. Alternatively, are explored superconducting properties of binary, metastable sub‐oxides, that may emerge under extremely low oxygen partial pressure. The emphasis is on the rock‐salt structure, which is known to promote superconductivity, and exploring AlO, ScO, TiO, and NbO. Dynamic lattice stability is achieved by introducing metal and oxygen vacancies in the fashion of Nb1−
- PAR ID:
- 10052092
- Publisher / Repository:
- American Institute of Physics
- Date Published:
- Journal Name:
- Journal of Applied Physics
- Volume:
- 122
- Issue:
- 19
- ISSN:
- 0021-8979
- Page Range / eLocation ID:
- 195101
- Format(s):
- Medium: X
- Sponsoring Org:
- National Science Foundation
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Superconductivity and Pronounced Electron‐Phonon Coupling in Rock‐Salt Al 1−x O 1−x and Ti 1−x O 1−x
Abstract x O1−x ‐type structure (x = ¼). The electron‐phonon (e‐ph) coupling is remarkably large in Al1−x O1−x and Ti1−x O1−x (λ ≈ 2 at x = ¼), with Tc ≈ 35 K according to the Allen–Dynes equation. Significantly, the coupling strength is comparable to that in high‐pressure hydrides, yet, in contrast to hydrides and MgB2, the coupling is largely driven by low frequency phonons. Sc1−x O1−x and Nb1−x O1−x show significantly smaller λ and Tc. Further, hydrogen intercalation to boost λ and Tc is investigated. Only Ti1−x (O1−x Hx) and Nb1−x (O1−x Hx) are dynamically stable upon intercalation, where H, respectively, decreases and increases Tc. The effect of H doping on electronic structure and Tc is discussed. Altogether, the study suggests that metal sub‐oxides are promising compounds to achieve strong e‐ph coupling at ambient pressure. -
Secondary‐ion mass spectrometry (SIMS) is used to determine impurity concentrations of carbon and oxygen in two scandium‐containing nitride semiconductor multilayer heterostructures: Sc
x Ga1−x N/GaN and Scx Al1−x N/AlN grown by molecular beam epitaxy (MBE). In the Scx Ga1−x N/GaN heterostructure grown in metal‐rich conditions on GaN–SiC template substrates with Sc contents up to 28 at%, the oxygen concentration is found to be below 1 × 1019 cm−3, with an increase directly correlated with the scandium content. In the Scx Al1−x N–AlN heterostructure grown in nitrogen‐rich conditions on AlN–Al2O3template substrates with Sc contents up to 26 at%, the oxygen concentration is found to be between 1019and 1021 cm−3, again directly correlated with the Sc content. The increase in oxygen and carbon takes place during the deposition of scandium‐alloyed layers.