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1. Characterization of high-purity germanium detectors with amorphous germanium contacts in cryogenic liquids

   https://doi.org/10.1140/epjc/s10052-020-8235-9  

   Panth, R. ; Liu, J. ; Abt, I. ; Liu, X. ; Schulz, O. ; Wei, W.-Z. ; Mei, H. ; Mei, D.-M. ; Wang, G.-J. ( July 2020 , The European Physical Journal C)
2. Investigation of amorphous germanium contact properties with planar detectors made from USD-grown germanium crystals

   https://doi.org/10.1088/1748-0221/13/12/P12026  

   Wei, W.-Z. ; Meng, X.-H. ; Li, Y.-Y. ; Liu, J. ; Wang, G.-J. ; Mei, H. ; Yang, G. ; Mei, D.-M. ; Zhang, C. ( December 2018 , Journal of Instrumentation)
3. Fabrication and characterization of high-purity germanium detectors with amorphous germanium contacts

   https://doi.org/10.1088/1748-0221/14/02/P02019  

   Meng, X.-H. ; Wang, G.-J. ; Wagner, M.-D. ; Mei, H. ; Wei, W.-Z. ; Liu, J. ; Yang, G. ; Mei, D.-M. ( February 2019 , Journal of Instrumentation)
4. Investigation of the electrical conduction mechanisms in P-type amorphous germanium electrical contacts for germanium detectors in searching for rare-event physics

   https://doi.org/10.1140/epjc/s10052-020-08529-z  

   Bhattarai, S. ; Panth, R. ; Wei, W.-Z. ; Mei, H. ; Mei, D.-M. ; Raut, M.-S. ; Acharya, P. ; Wang, G.-J. ( October 2020 , The European Physical Journal C)

   null (Ed.)

   Abstract For the first time, electrical conduction mechanisms in the disordered material system is experimentally studied for p-type amorphous germanium (a-Ge) used for high-purity Ge detector contacts. The localization length and the hopping parameters in a-Ge are determined using the surface leakage current measured from three high-purity planar Ge detectors. The temperature dependent hopping distance and hopping energy are obtained for a-Ge fabricated as the electrical contact materials for high-purity Ge planar detectors. As a result, we find that the hopping energy in a-Ge increases as temperature increases while the hopping distance in a-Ge decreases as temperature increases. The localization length of a-Ge is on the order of $$2.13^{-0.05}_{+0.07}\mathrm{{A}}^\circ $$ 2 . 13 + 0.07 - 0.05 A ∘ to $$5.07^{-0.83}_{+2.58}\mathrm{{A}}^\circ $$ 5 . 07 + 2.58 - 0.83 A ∘ , depending on the density of states near the Fermi energy level within bandgap. Using these parameters, we predict that the surface leakage current from a Ge detector with a-Ge contacts can be much smaller than one yocto amp (yA) at helium temperature, suitable for rare-event physics searches. 

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5. Germanium Quantum-Well Josephson Field-Effect Transistors and Interferometers

   https://doi.org/10.1021/acs.nanolett.8b04275  

   Vigneau, Florian ; Mizokuchi, Raisei ; Zanuz, Dante Colao ; Huang, Xuhai ; Tan, Susheng ; Maurand, Romain ; Frolov, Sergey ; Sammak, Amir ; Scappucci, Giordano ; Lefloch, Francois ; et al ( January 2019 , Nano Letters)