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Title: Intrinsically stretchable field-effect transistors
A thin-film field-effect transistor (TFT) is a three-terminal device comprising source, drain, and gate electrodes, a dielectric layer, a semiconductor layer, and a substrate. The TFT is a fundamental building component in a variety of electronic devices. Developing an intrinsically stretchable TFT entails availability and usage of a functional material with elastomeric deformability in response to an externally applied stress. This represents a major materials challenge. In this article, we survey strategies to synthesize these elastomeric functional materials, and how these materials are assembled to fabricate intrinsically stretchable TFT devices. Developing solution-based printing technology to assemble intrinsically stretchable TFTs is considered a prospective strategy for wearable electronics for industrial adaptation in the near future.  more » « less
Award ID(s):
1638163
PAR ID:
10062522
Author(s) / Creator(s):
; ; ;
Date Published:
Journal Name:
MRS Bulletin
Volume:
42
Issue:
02
ISSN:
0883-7694
Page Range / eLocation ID:
131 to 137
Format(s):
Medium: X
Sponsoring Org:
National Science Foundation
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