Diamond like semiconductors (DLS) have emerged as candidates for thermoelectric energy conversion. Towards understanding and optimizing performance, we present a comprehensive investigation of the electronic properties of two DLS phases, quaternary Cu 2 HgGeTe 4 and related ordered vacancy compound Hg 2 GeTe 4 , including thermodynamic stability, defect chemistry, and transport properties. To establish the thermodynamic link between the related but distinct phases, the stability region for both is visualized in chemical potential space. In spite of their similar structure and bonding, we show that the two materials exhibit reciprocal behaviors for dopability. Cu 2 HgGeTe 4 is degenerately p-type in all environments despite its wide stability region, due to the presence of low-energy acceptor defects V Cu and Cu Hg and is resistant to extrinsic n-type doping. Meanwhile Hg 2 GeTe 4 has a narrow stability region and intrinsic behavior due to the relatively high formation energy of native defects, but presents an opportunity for bi-polar doping. While these two compounds have similar structure, bonding, and chemical constituents, the reciprocal nature of their dopability emerges from significant differences in band edge positions. A Brouwer band diagram approach is utilized to visualize the role of native defects on carrier concentrations, dopability, and transport properties. This study elucidates the doping asymmetry between two solid-solution forming DLS phases Cu 2 HgGeTe 4 and Hg 2 GeTe 4 by revealing the defect chemistry of each compound, and suggests design strategies for defect engineering of DLS phases.
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Crystal chemistry and thermoelectric transport of layered AM 2 X 2 compounds
Compounds that crystallize in the layered CaAl 2 Si 2 structural pattern have rapidly emerged as an exciting class of thermoelectric materials with attractive n- and p-type properties. More than 100 AM 2 X 2 compounds that form this structure type – characterized by anionic M 2 X 2 slabs sandwiched between layers of octahedrally coordinated A cations – provide numerous potential paths to chemically tune every aspect of thermoelectric transport. This review highlights the chemical diversity of this structure type, discusses the rules governing its formation and stability relative to competing AM 2 X 2 structures ( e.g. , ThCr 2 Si 2 and BaCu 2 S 2 ), and attempts to bring some of the most recently discovered compounds into the spotlight. The discussion of thermoelectric transport properties in AM 2 X 2 compounds focuses primarily on the intrinsic parameters that determine the potential for a high figure of merit: the band gap, effective mass, degeneracy, carrier relaxation time, and lattice thermal conductivity. We also discuss routes that have been used to successfully control the carrier concentration, including controlling the cation vacancy concentration, doping, and isoelectronic alloying (approaches that are highly interdependent). Finally, we discuss recent progress made towards n-type doping in this system, highlight opportunities for further improvements, as well as open questions that still remain.
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- Award ID(s):
- 1709158
- PAR ID:
- 10063329
- Date Published:
- Journal Name:
- Inorganic Chemistry Frontiers
- ISSN:
- 2052-1553
- Format(s):
- Medium: X
- Sponsoring Org:
- National Science Foundation
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- Free Publicly Accessible Full Text
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Accepted Manuscript1.0
- Journal Article:
- https://doi.org/10.1039/C7QI00813A
