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Uniaxial strain has been widely used as a powerful tool for investigating and controlling the properties of quantum materials. However, existing strain techniques have so far mostly been limited to use with bulk crystals. Although recent progress has been made in extending the application of strain to two-dimensional van der Waals (vdW) heterostructures, these techniques have been limited to optical characterization and extremely simple electrical device geometries. Here, we report a piezoelectric-based in situ uniaxial strain technique enabling simultaneous electrical transport and optical spectroscopy characterization of dual-gated vdW heterostructure devices. Critically, our technique remains compatible with vdW heterostructure devices of arbitrary complexity fabricated on conventional silicon/silicon dioxide wafer substrates. We demonstrate a large and continuously tunable strain of up to −0.15% at millikelvin temperatures, with larger strain values also likely achievable. We quantify the strain transmission from the silicon wafer to the vdW heterostructure, and further demonstrate the ability of strain to modify the electronic properties of twisted bilayer graphene. Our technique provides a highly versatile new method for exploring the effect of uniaxial strain on both the electrical and optical properties of vdW heterostructures and can be easily extended to include additional characterization techniques.
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Large piezoelectric response of van der Waals layered solids
The bulk piezoelectric response, as measured by the piezoelectric modulus tensor ( d ), is determined by a combination of charge redistribution due to strain and the amount of strain produced by the application of stress (stiffness). Motivated by the notion that less stiff materials could exhibit large piezoelectric responses, herein, we investigate the piezoelectric modulus of van der Waals (vdW) layered materials using first-principles calculations. From a pool of 869 known binary and ternary quasi-2D layered materials, we have identified 135 non-centrosymmetric crystals of which 51 are found to have piezoelectric modulus tensor ( d ) components larger than the longitudinal piezoelectric modulus of AlN, a commonly used piezoelectric material for resonators. We have also identified three materials with d components larger than that of PbTiO 3 , which is among the materials with the largest known piezoelectric modulus. None of the identified materials have previously been considered for piezoelectric applications. Furthermore, we find that large d components are always coupled to the shear or axial deformations of the vdW gap between the layers and are indeed enabled by the weak inter-layer interactions.
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- Award ID(s):
- 1534503
- PAR ID:
- 10079544
- Date Published:
- Journal Name:
- Journal of Materials Chemistry C
- Volume:
- 6
- Issue:
- 41
- ISSN:
- 2050-7526
- Page Range / eLocation ID:
- 11035 to 11044
- Format(s):
- Medium: X
- Sponsoring Org:
- National Science Foundation
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- Free Publicly Accessible Full Text
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Accepted Manuscript1.0
- Journal Article:
- https://doi.org/10.1039/C8TC02560F
