skip to main content
US FlagAn official website of the United States government
dot gov icon
Official websites use .gov
A .gov website belongs to an official government organization in the United States.
https lock icon
Secure .gov websites use HTTPS
A lock ( lock ) or https:// means you've safely connected to the .gov website. Share sensitive information only on official, secure websites.

Explore Research Products in the PAR
It may take a few hours for recently added research products to appear in PAR search results.


Title: Photovoltage as a quantitative probe of carrier generation and recombination in organic photovoltaic cells
Photoconversion in organic photovoltaic cells (OPVs) is limited by carrier recombination that frustrates charge collection at the electrodes. Consequently, identification of the dominant recombination mechanisms is critical to inform device design for improved performance. This analysis is complicated by the need to have a quantitative measure of carrier generation. Here, we demonstrate a photovoltage-based technique to directly investigate the generation of charge carriers in OPVs. This technique allows illuminated current losses to both geminate and non-geminate recombination to be directly quantified as a function of voltage. While broadly applicable, here the technique is demonstrated on OPVs based on the donor–acceptor pairings of 2-((7-(4- N , N -ditolylaminophenylen-1-yl)benzo[ c ][1,2,5]thiadiazol-4-yl)methylene)malononitrile (DTDCPB)-C 60 and copper phthalocyanine (CuPc)-C 60 . Both structures are limited by geminate recombination at short-circuit and under reverse bias. Under forward bias, the severity of non-geminate recombination depends on both materials selection and device architecture. Consequently, this technique quantitatively casts changes in performance with choice of OPV architecture in terms of the relative roles of geminate and non-geminate recombination.  more » « less
Award ID(s):
1708177
PAR ID:
10080082
Author(s) / Creator(s):
;
Date Published:
Journal Name:
Journal of Materials Chemistry C
Volume:
5
Issue:
45
ISSN:
2050-7526
Page Range / eLocation ID:
11885 to 11891
Format(s):
Medium: X
Sponsoring Org:
National Science Foundation
More Like this
  1. ; (, Advanced Energy Materials)
    Abstract Significant work has been directed at measuring the exciton diffusion length (LD) in organic semiconductors due to its significance in determining the performance of photovoltaic cells. Several techniques have been developed to measureLD, often probing photoluminescence or charge carrier generation. Interestingly, in this study it is shown that when different techniques are compared, both the diffusive behavior of the exciton and active carrier recombination loss pathways can be decoupled. Here, a planar heterojunction device based on the donor–acceptor pairing of boron subphthalocyanine chloride‐C60is examined using photoluminescence quenching, photovoltage‐, and photocurrent‐basedLDmeasurement techniques. Photovoltage yields the device relevantLDof both active materials as a function of forward bias subject to geminate recombination losses. These values are used to accurately predict the photocurrent as a function of voltage, suggesting geminate recombination is the dominant mechanism responsible for photocurrent loss. By combining these measurements with photocurrent and photoluminescence quenching, the intrinsicLD, as well as the voltage‐dependent charge transfer state dissociation and charge collection efficiencies are quantitatively determined. The results of this work provide a method to decouple all relevant loss pathways during photoconversion, and establish the factors that can limit the performance of excitonic photovoltaic cells. 
    more » « less
  2. ; ; ; ; ; ; ; ; ; ; et al (, Advanced Energy Materials)
    Abstract The influence of halogen substitutions (F, Cl, Br, and I) on the energy levels of the self‐assembled hole‐extracting molecule [2‐(9H‐Carbazol‐9‐yl)ethyl]phosphonic acid (2PACz), is investigated. It is found that the formation of self‐assembled monolayers (SAMs) of [2‐(3,6‐Difluoro‐9H‐carbazol‐9‐yl)ethyl]phosphonic acid (F‐2PACz), [2‐(3,6‐Dichloro‐9H‐carbazol‐9‐yl)ethyl]phosphonic acid (Cl‐2PACz), [2‐(3,6‐Dibromo‐9H‐carbazol‐9‐yl)ethyl]phosphonic acid (Br‐2PACz), and [2‐(3,6‐Diiodo‐9H‐carbazol‐9‐yl)ethyl]phosphonic acid (I‐2PACz) directly on indium tin oxide (ITO) increases its work function from 4.73 eV to 5.68, 5.77, 5.82, and 5.73 eV, respectively. Combining these ITO/SAM electrodes with the ternary bulk‐heterojunction (BHJ) system PM6:PM7‐Si:BTP‐eC9 yields organic photovoltaic (OPV) cells with power conversion efficiency (PCE) in the range of 17.7%–18.5%. OPVs featuring Cl‐2PACz SAMs yield the highest PCE of 18.5%, compared to cells with F‐2PACz (17.7%), Br‐2PACz (18.0%), or I‐2PACz (18.2%). Data analysis reveals that the enhanced performance of Cl‐2PACz‐based OPVs relates to the increased hole mobility, decreased interface resistance, reduced carrier recombination, and longer carrier lifetime. Furthermore, OPVs featuring Cl‐2PACz show enhanced stability under continuous illumination compared to ITO/PEDOT:PSS‐based cells. Remarkably, the introduction of the n‐dopant benzyl viologen into the BHJ further boosted the PCE of the ITO/Cl‐2PACz cells to a maximum value of 18.9%, a record‐breaking value for SAM‐based OPVs and on par with the best‐performing OPVs reported to date. 
    more » « less
  3. ; ; ; ; ; ; ; ; ; ; et al (, Materials Horizons)
    Developing efficient and stable organic photovoltaics (OPVs) is crucial for the technology's commercial success. However, combining these key attributes remains challenging. Herein, we incorporate the small molecule 2-((3,6-dibromo-9 H -carbazol-9-yl)ethyl)phosphonic acid (Br-2PACz) between the bulk-heterojunction (BHJ) and a 7 nm-thin layer of MoO 3 in inverted OPVs, and study its effects on the cell performance. We find that the Br-2PACz/MoO 3 hole-extraction layer (HEL) boosts the cell's power conversion efficiency (PCE) from 17.36% to 18.73% (uncertified), making them the most efficient inverted OPVs to date. The factors responsible for this improvement include enhanced charge transport, reduced carrier recombination, and favourable vertical phase separation of donor and acceptor components in the BHJ. The Br-2PACz/MoO 3 -based OPVs exhibit higher operational stability under continuous illumination and thermal annealing (80 °C). The T 80 lifetime of OPVs featuring Br-2PACz/MoO 3 – taken as the time over which the cell's PCE reduces to 80% of its initial value – increases compared to MoO 3 -only cells from 297 to 615 h upon illumination and from 731 to 1064 h upon continuous heating. Elemental analysis of the BHJs reveals the enhanced stability to originate from the partially suppressed diffusion of Mo ions into the BHJ and the favourable distribution of the donor and acceptor components induced by the Br-2PACz. 
    more » « less
  4. ; ; ; ; ; ; ; ; (, Condensed Matter)
    Forward bias hole injection from 10-nm-thick p-type nickel oxide layers into 10-μm-thick n-type gallium oxide in a vertical NiO/Ga2O3 p–n heterojunction leads to enhancement of photoresponse of more than a factor of 2 when measured from this junction. While it takes only 600 s to obtain such a pronounced increase in photoresponse, it persists for hours, indicating the feasibility of photovoltaic device performance control. The effect is ascribed to a charge injection-induced increase in minority carrier (hole) diffusion length (resulting in improved collection of photogenerated non-equilibrium carriers) in n-type β-Ga2O3 epitaxial layers due to trapping of injected charge (holes) on deep meta-stable levels in the material and the subsequent blocking of non-equilibrium carrier recombination through these levels. Suppressed recombination leads to increased non-equilibrium carrier lifetime, in turn determining a longer diffusion length and being the root-cause of the effect of charge injection. 
    more » « less
  5. ; ; ; ; ; ; ; ; ; (, Nanotechnology)
    LaPierre, Ray (Ed.)
    Abstract Recent advances in the growth of III-V semiconductor nanowires (NWs) hold great promise for nanoscale optoelectronic device applications. Recently, it was found that a small amount of nitrogen (N) incorporation in III-V semiconductor NWs can effectively red-shift their wavelength of operation and tailor their electronic properties for specific applications. However, understanding the impact of N incorporation on non-equilibrium charge carrier dynamics and transport in semiconducting NWs is critical in achieving efficient semiconducting NW devices. In this work, ultrafast optical pump-terahertz probe spectroscopy has been used to study non-equilibrium carrier dynamics and transport in Te-doped GaAsSb and dilute nitride GaAsSbN NWs, with the goal of correlating these results with electrical characterization of their equilibrium photo-response under bias and low-frequency noise characteristics. Nitrogen incorporation in GaAsSb NWs led to a significant increase in the carrier scattering rate, resulting in a severe reduction in carrier mobility. Carrier recombination lifetimes of 33 ± 1 picoseconds (ps) and 147 ± 3 ps in GaAsSbN and GaAsSb NWs, respectively, were measured. The reduction in the carrier lifetime and photoinduced optical conductivities are due to the presence of N-induced defects, leading to deterioration in the electrical and optical characteristics of dilute nitride NWs relative to the non-nitride NWs. Finally, we observed a very fast rise time of ~ 2 ps for both NW materials, directly impacting their potential use as high-speed photodetectors. 
    more » « less
  • Citation Formats
  • MLA
  • APA
  • Chicago
  • BibTeX
  • Save / Share this Record
  • Send to Email