Hao, Qing, Zhao, Hongbo, Xiao, Yue, Wang, Quan, and Wang, Xiaoliang. Hybrid Electrothermal Simulation of a 3-D Fin-Shaped Field-Effect Transistor Based on GaN Nanowires. Retrieved from https://par.nsf.gov/biblio/10080205. IEEE Transactions on Electron Devices 65.3 Web. doi:10.1109/TED.2018.2791959.

Hao, Qing, Zhao, Hongbo, Xiao, Yue, Wang, Quan, & Wang, Xiaoliang. Hybrid Electrothermal Simulation of a 3-D Fin-Shaped Field-Effect Transistor Based on GaN Nanowires. IEEE Transactions on Electron Devices, 65 (3). Retrieved from https://par.nsf.gov/biblio/10080205. https://doi.org/10.1109/TED.2018.2791959

Hao, Qing, Zhao, Hongbo, Xiao, Yue, Wang, Quan, and Wang, Xiaoliang. "Hybrid Electrothermal Simulation of a 3-D Fin-Shaped Field-Effect Transistor Based on GaN Nanowires". IEEE Transactions on Electron Devices 65 (3). Country unknown/Code not available. https://doi.org/10.1109/TED.2018.2791959. https://par.nsf.gov/biblio/10080205.

@article{osti_10080205,
place = {Country unknown/Code not available}, title = {Hybrid Electrothermal Simulation of a 3-D Fin-Shaped Field-Effect Transistor Based on GaN Nanowires}, url = {https://par.nsf.gov/biblio/10080205}, DOI = {10.1109/TED.2018.2791959}, abstractNote = {}, journal = {IEEE Transactions on Electron Devices}, volume = {65}, number = {3}, author = {Hao, Qing and Zhao, Hongbo and Xiao, Yue and Wang, Quan and Wang, Xiaoliang}, }