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1. One-electron bonds in copper–aluminum and copper–gallium complexes

   https://doi.org/10.1039/D2SC01998A  

   Graziano, Brendan J.; Scott, Thais R.; Vollmer, Matthew V.; Dorantes, Michael J.; Young, Victor G.; Bill, Eckhard; Gagliardi, Laura; Lu, Connie C. (June 2022, Chemical Science)

   Odd-electron bonds have unique electronic structures and are often encountered as transiently stable, homonuclear species. In this study, a pair of copper complexes supported by Group 13 metalloligands, M[N(( o -C 6 H 4 )NCH 2 P i Pr 2 ) 3 ] (M = Al or Ga), featuring two-center/one-electron (2c/1e) σ-bonds were synthesized by one-electron reduction of the corresponding Cu( i ) ⇢ M(III) counterparts. The copper bimetallic complexes were investigated by X-ray diffraction, cyclic voltammetry, electron paramagnetic spectroscopy, and density functional theory calculations. The combined experimental and theoretical data corroborate that the unpaired spin is delocalized across Cu, M, and ancillary atoms, and the singly occupied molecular orbital (SOMO) corresponds to a σ-(Cu–M) bond involving the Cu 4p z and M n s/ n p z atomic orbitals. Collectively, the data suggest the covalent nature of these interactions, which represent the first examples of odd-electron σ-bonds for the heavier Group 13 elements Al and Ga. 

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2. Multiscale modeling of copper and copper/nickel nanofoams under compression

   https://doi.org/10.1016/j.commatsci.2019.109290  

   Ke, H.; Jimenez, A. Garcia; Da Silva, D.A. Rodrigues; Mastorakos, I. (February 2020, Computational Materials Science)
3. Mixed phosphine/carbonyl derivatives of heterobimetallic copper–iron and copper–tungsten catalysts

   https://doi.org/10.1016/j.poly.2018.09.062  

   Leon, Noel J.; Yu, Hsien-Cheng; Mazzacano, Thomas J.; Mankad, Neal P. (January 2019, Polyhedron)
4. Copper Oxide Passivation Effect on Electromigration Lifetime of Plasma Etched Copper Lines

   https://doi.org/10.1149/09803.0099ecst  

   Su, Jia Quan; Kuo, Yue (September 2020, ECS transactions)

   The degradation of the copper oxide passivated copper line prepared from a room temperature plasma-based etch process under the electromigration condition has been studied. The copper line surface was oxidized into the copper oxide layer in a parallel-plate plasma reactor operated under the plasma etching or reactive ion etching mode. The surface roughness of the oxide is contributed by the high ion bombardment energy. The lifetime of the sample was shortened by the addition of the oxide passivation layer. It was also decreased with the increase of the stress current density. The sample with the thin bulk copper layer is more resistant to the thermal stress than that with the thick bulk copper layer, which delayed the voids formation in the line breakage process. 

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5. Electromigration Study of Plasma Etched Copper Lines with Copper Oxide Capping Layers

   https://doi.org/10.1149/09703.0051ecst  

   Su, Jia Quan; Kuo, Yue (April 2020, ECS Transactions)