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1. Glass‐Like Through‐Plane Thermal Conductivity Induced by Oxygen Vacancies in Nanoscale Epitaxial La 0.5 Sr 0.5 CoO 3− δ

   https://doi.org/10.1002/adfm.201704233  

   Wu, Xuewang ; Walter, Jeff ; Feng, Tianli ; Zhu, Jie ; Zheng, Hong ; Mitchell, John F. ; Biškup, Neven ; Varela, Maria ; Ruan, Xiulin ; Leighton, Chris ; et al ( November 2017 , Advanced Functional Materials)

   Ultrafast time‐domain thermoreflectance (TDTR) is utilized to extract the through‐plane thermal conductivity (Λ_LSCO) of epitaxial La_0.5Sr_0.5CoO_3−δ(LSCO) of varying thickness (<20 nm) on LaAlO₃and SrTiO₃substrates. These LSCO films possess ordered oxygen vacancies as the primary means of lattice mismatch accommodation with the substrate, which induces compressive/tensile strain and thus controls the orientation of the oxygen vacancy ordering (OVO). TDTR results demonstrate that the room‐temperatureΛ_LSCOof LSCO on both substrates (1.7 W m⁻¹K⁻¹) are nearly a factor of four lower than that of bulk single‐crystal LSCO (6.2 W m⁻¹K⁻¹). Remarkably, this approaches the lower limit of amorphous oxides (e.g., 1.3 W m⁻¹K⁻¹for glass), with no dependence on the OVO orientation. Through theoretical simulations, origins of the glass‐like thermal conductivity of LSCO are revealed as a combined effect resulting from oxygen vacancies (the dominant factor), Sr substitution, size effects, and the weak electron/phonon coupling within the LSCO film. The absence of OVO dependence in the measuredΛ_LSCOis rationalized by two main effects: (1) the nearly isotropic phononic thermal conductivity resulting from the imperfect OVO planes when δ is small; (2) the missing electronic contribution toΛ_LSCOalong the through‐plane direction for these ultrathin LSCO films on insulating substrates.

    

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2. Bandgap and strain engineering in epitaxial rocksalt structure (Ti 0.5 Mg 0.5 ) 1−x Al x N(001) semiconductors

   https://doi.org/10.1039/d0tc03598j  

   Wang, Baiwei ; Zhang, Minghua ; Adhikari, Vijaya ; Fang, Peijiao ; Khare, Sanjay V. ; Gall, Daniel ( September 2020 , Journal of Materials Chemistry C)

   null (Ed.)

   Rocksalt structure nitrides emerge as a promising class of semiconductors for high-temperature thermoelectric and plasmonic applications. Controlling the bandgap and strain is essential for the development of a wide variety of electronic devices. Here we use (Ti 0.5 Mg 0.5 ) 1−x Al x N as a model system to explore and demonstrate the tunability of both the bandgap and the strain state in rocksalt structure nitrides, employing a combined experimental and computational approach. (Ti 0.5 Mg 0.5 ) 1−x Al x N layers with x ≤ 0.44 deposited on MgO(001) substrates by reactive co-sputtering at 700 °C are epitaxial single crystals with a solid-solution B1 rocksalt structure. The lattice mismatch with the substrate decreases with increasing x , leading to a transition in the strain-state from partially relaxed (74% and 38% for x = 0 and 0.09) to fully strained for x ≥ 0.22. First-principles calculations employing 64-atom Special Quasirandom Structures (SQS) indicate that the lattice constant decreases linearly with x according to a = (4.308 − 0.234 x ) Å for 0 ≤ x ≤ 1. In contrast, the measured relaxed lattice parameter a o = (4.269 − 0.131 x ) Å is linear only for x ≤ 0.33, its composition dependence is less pronounced, and x > 0.44 leads to the nucleation of secondary phases. The fundamental (indirect) bandgap predicted using the same SQS supercells and the HSE06 functional increases from 1.0 to 2.6 eV for x = 0–0.75. In contrast, the onset of the measured optical absorption due to interband transitions increases only from 2.3 to 2.6 eV for x = 0–0.44, suggesting that the addition of Al in the solid solution relaxes the electron momentum conservation and causes a shift from direct to indirect gap transitions. The resistivity increases from 9.0 to 708 μΩ m at 77 K and from 6.8 to 89 μΩ m at 295 K with increasing x = 0–0.44, indicating an increasing carrier localization associated with a randomization of cation site occupation and the increasing bandgap which also causes a 33% reduction in the optical carrier concentration. The overall results demonstrate bandgap and strain engineering in rocksalt nitride semiconductors and show that, in contrast to conventional covalent semiconductors, the random cation site occupation strongly affects optical transitions. 

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3. Ambient‐Pressure Relithiation of Degraded Li x Ni 0.5 Co 0.2 Mn 0.3 O 2 (0 x < 1) via Eutectic Solutions for Direct Regeneration of Lithium‐Ion Battery Cathodes

   https://doi.org/10.1002/aenm.201900454  

   Shi, Yang ; Zhang, Minghao ; Meng, Ying Shirley ; Chen, Zheng ( April 2019 , Advanced Energy Materials)

   With the rapid growth of the lithium‐ion battery (LIBs) market, recycling and re‐use of end‐of‐life LIBs to reclaim lithium (Li) and transition metal (TM) resources (e.g., Co, Ni), as well as eliminating pollution from disposal of waste batteries, has become an urgent task. Here, for the first time the ambient‐pressure relithiation of degraded LiNi_0.5Co_0.2Mn_0.3O₂(NCM523) cathodes via eutectic Li⁺molten‐salt solutions is successfully demonstrated. Combining such a low‐temperature relithiation process with a well‐designed thermal annealing step, NCM523 cathode particles with significant Li loss (≈40%) and capacity degradation (≈50%) can be successfully regenerated to achieve their original composition and crystal structures, leading to effective recovery of their capacity, cycling stability, and rate capability to the levels of the pristine materials. Advanced characterization tools including atomic resolution electron microscopy imaging and electron energy loss spectroscopy are combined to demonstrate that NCM523's original layered crystal structure is recovered. For the first time, it is shown that layer‐to‐rock salt phase change on the surfaces and subsurfaces of the cathode materials can be reversed if lithium can be incorporated back to the material. The result suggests the great promise of using eutectic Li⁺molten–salt solutions for ambient‐pressure relithiation to recycle and remanufacture degraded LIB cathode materials.

    

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4. Effect of R-site element on crystalline phase and thermal stability of Fe substituted Mn mullite-type oxides: R 2 (Mn 1−x Fe x ) 4 O 10−δ (R = Y, Sm or Bi; x = 0, 0.5, 1)

   https://doi.org/10.1039/C7RA09699B  

   Thampy, Sampreetha ; Ashburn, Nickolas ; Martin, Thomas J. ; Li, Chenzhe ; Zheng, Yongping ; Chan, Julia Y. ; Cho, Kyeongjae ; Hsu, Julia W. ( January 2018 , RSC Advances)

   Combining experimental and theoretical studies, we investigate the role of R-site (R = Y, Sm, Bi) element on the phase formation and thermal stability of R 2 (Mn 1−x Fe x ) 4 O 10−δ ( x = 0, 0.5, 1) mullite-type oxides. Our results show a distinct R-site dependent phase behavior for mullite-type oxides as Fe is substituted for Mn: 100% mullite-type phase was formed in (Y, Sm, Bi) 2 Mn 4 O 10 ; 55% and 18% of (Y, Sm) 2 Mn 2 Fe 2 O 10−δ was found when R = Y and Sm, respectively, for equal Fe and Mn molar concentrations in the reactants, whereas Bi formed 54% O10- and 42% O9-mixed mullite-type phases. Furthermore, when the reactants contain 100% Fe, no mullite-type phase was formed for R = Y and Sm, but a sub-group transition to Bi 2 Fe 4 O 9 O9-phase was found for R = Bi. Thermogravimetric analysis and density functional theory (DFT) calculation results show a decreasing thermal stability in O10-type structure with increasing Fe incorporation; for example, the decomposition temperature is 1142 K for Bi 2 Mn 2 Fe 2 O 10−δ vs. 1217 K for Bi 2 Mn 4 O 10 . On the other hand, Bi 2 Fe 4 O 9 O9-type structure is found to be thermally stable up to 1227 K. These findings are explained by electronic structure calculations: (1) as Fe concentration increases, Jahn–Teller distortion results in mid band-gap empty states from unstable Fe 4+ occupied octahedra, which is responsible for the decrease in O10 structure stability; (2) the directional sp orbital hybridization unique to Bi effectively stabilizes the mullite-type structure as Fe replaces Mn. 

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5. The impact of site selectivity and disorder on the thermoelectric properties of Yb 21 Mn 4 Sb 18 solid solutions: Yb 21 Mn 4−x Cd x Sb 18 and Yb 21−y Ca y Mn 4 Sb 18

   https://doi.org/10.1039/d1ma00497b  

   He, Allan ; Cerretti, Giacomo ; Kauzlarich, Susan M. ( August 2021 , Materials Advances)

   Thermoelectric materials can convert heat into electricity. They are used to generate electricity when other power sources are not available or to increase energy efficiency by recycling waste heat. The Yb 21 Mn 4 Sb 18 phase was previously shown to have good thermoelectric performance due to its large Seebeck coefficient (∼290 μV K −1 ) and low thermal conductivity (0.4 W m −1 K −1 ). These characteristics stem respectively from the unique [Mn 4 Sb 10 ] 22− subunit and the large unit cell/site disorder inherent in this phase. The solid solutions, Yb 21 Mn 4− x Cd x Sb 18 ( x = 0, 0.5, 1.0, 1.5) and Yb 21− y Ca y Mn 4 Sb 18 ( y = 3, 6, 9, 10.5) have been prepared, their structures characterized and thermoelectric properties from room temperature to 800 K measured. A detailed look into the structural disorder for the Cd and Ca solid solutions was performed using synchrotron powder X-ray diffraction and pair distribution function methods and shows that these are highly disordered structures. The substitution of Cd gives rise to more metallic behavior whereas Ca substitution results in high resistivity. As both Cd and Ca are isoelectronic substitutions, the changes in properties are attributed to changes in the electronic structure. Both solid solutions show that the thermal conductivities remain extremely low (∼0.4 W m −1 K −1 ) and that the Seebeck coefficients remain high (>200 μV K −1 ). The temperature dependence of the carrier mobility with increased Ca substitution, changing from approximately T −1 to T −0.5 , suggests that another scattering mechanism is being introduced. As the bonding changes from polar covalent with Yb to ionic for Ca, polar optical phonon scattering becomes the dominant mechanism. Experimental studies of the Cd solid solutions result in a max zT of ∼1 at 800 K and, more importantly for application purposes, a ZT avg ∼ 0.6 from 300 K to 800 K. 

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