Oxygen vacancies (V O ) influence many properties of ZnO in semiconductor devices, yet synthesis methods leave behind variable and unpredictable V O concentrations. Oxygen interstitials (O i ) move far more rapidly, so post-synthesis introduction of O i to control the V O concentration would be desirable. Free surfaces offer such an introduction mechanism if they are free of poisoning foreign adsorbates. Here, isotopic exchange experiments between nonpolar ZnO(101̄0) and O 2 gas, together with mesoscale modeling and first-principles calculations, point to an activation barrier for injection only 0.1–0.2 eV higher than for bulk site hopping. The modest barrier for hopping in turn enables diffusion lengths of tens to hundreds of nanometers only slightly above room temperature, which should facilitate defect engineering under very modest conditions. In addition, low hopping barriers coupled with statistical considerations lead to important qualitative manifestations in diffusion via an interstitialcy mechanism that does not occur for vacancies.
more »
« less
First-principles description of oxygen self-diffusion in rutile TiO 2 : assessment of uncertainties due to enthalpy and entropy contributions
Properties related to transport such as self-diffusion coefficients are relevant to fuel cells, electrolysis cells, and chemical/gas sensors. Prediction of self-diffusion coefficients from first-principles involves precise determination of both enthalpy and entropy contributions for point defect formation and migration. We use first-principles density functional theory to estimate the self-diffusion coefficient for neutral O0i and doubly ionized O i 2− interstitial oxygen in rutile TiO 2 and compare the results to prior isotope diffusion experiments. In addition to formation and migration energy, detailed estimates of formation and migration entropy incorporating both vibrational and ionization components are included. Distinct migration pathways, both based on an interstitialcy mechanism, are identified for O0i and O i 2− . These result in self-diffusion coefficients that differ by several orders of magnitude, sufficient to resolve the charge state of the diffusing species to be O i 2− in experiment. The main sources of error when comparing computed parameters to those obtained from experiment are considered, demonstrating that uncertainties due to computed defect formation and migration entropies are comparable in magnitude to those due to computed defect formation and migration energies. Even so, the composite uncertainty seems to limit the accuracy of first-principles calculations to within a factor of ±10 3 , demonstrating that direct connections between computation and experiment are now increasingly possible.
more »
« less
- Award ID(s):
- 1709327
- PAR ID:
- 10090772
- Date Published:
- Journal Name:
- Physical Chemistry Chemical Physics
- Volume:
- 20
- Issue:
- 25
- ISSN:
- 1463-9076
- Page Range / eLocation ID:
- 17448 to 17457
- Format(s):
- Medium: X
- Sponsoring Org:
- National Science Foundation
More Like this
-
-
Abstract Many of the studies on the entropy‐stabilized oxide (Mg0.2Co0.2Ni0.2Cu0.2Zn0.2)O have been heavily application‐based. Previous works have studied effects of cation stoichiometry on the entropy‐driven reaction to form a single phase, but a fundamental exploration of the effects of anion stoichiometry and/or redox chemistry on electrical properties is lacking. Using near‐edge X‐ray absorption fine structure (NEXAFS) and electrical measurements, we show that oxidizing thin film samples of (Mg0.2Co0.2Ni0.2Cu0.2Zn0.2)O affects primarily the valence of Co, leaving the other cations in this high‐entropy system unchanged. This oxidation increases electrical conduction in these thin films, which occurs via small polaron hopping mediated by the Co valence shift from 2+ to a mixed 2+/3+ state. In parallel, we show that bulk samples sintered in an oxygen‐rich atmosphere have a lower activation energy for electrical conduction than those equilibrated in a nitrogen (reducing) atmosphere. Combining feasible defect compensation scenarios with electrical impedance measurements and NEXAFS data, we propose a self‐consistent interpretation of Co redox‐mediated small polaron conduction as the dominant method of charge transfer in this system.more » « less
-
A Cu( i ) fully fluorinated O-donor monodentate alkoxide complex, K[Cu(OC 4 F 9 ) 2 ], was previously shown to form a trinuclear copper–dioxygen species with a {Cu 3 (μ 3 -O) 2 } core, T OC4F9 , upon reactivity with O 2 at low temperature. Herein is reported a significantly expanded kinetic and mechanistic study of T OC4F9 formation using stopped-flow spectroscopy. The T OC4F9 complex performs catalytic oxidase conversion of hydroquinone (H 2 Q) to benzoquinone (Q). T OC4F9 also demonstrated hydroxylation of 2,4-di- tert -butylphenolate (DBP) to catecholate, making T OC4F9 the first trinuclear species to perform tyrosinase (both monooxygenase and oxidase) chemistry. Resonance Raman spectra were also obtained for T OC4F9 , to our knowledge, the first such spectra for any T species. The mechanism and substrate reactivity of T OC4F9 are compared to those of its bidentate counterpart, T pinF , formed from K[Cu(pin F )(PR 3 )]. The monodentate derivative has both faster initial formation and more diverse substrate reactivity.more » « less
-
This paper series aims to establish a complete correspondence between fine-grained (FG) and coarse-grained (CG) dynamics by way of excess entropy scaling (introduced in Paper I). While Paper II successfully captured translational motions in CG systems using a hard sphere mapping, the absence of rotational motions in single-site CG models introduces differences between FG and CG dynamics. In this third paper, our objective is to faithfully recover atomistic diffusion coefficients from CG dynamics by incorporating rotational dynamics. By extracting FG rotational diffusion, we unravel, for the first time reported to our knowledge, a universality in excess entropy scaling between the rotational and translational diffusion. Once the missing rotational dynamics are integrated into the CG translational dynamics, an effective translation-rotation coupling becomes essential. We propose two different approaches for estimating this coupling parameter: the rough hard sphere theory with acentric factor (temperature-independent) or the rough Lennard-Jones model with CG attractions (temperature-dependent). Altogether, we demonstrate that FG diffusion coefficients can be recovered from CG diffusion coefficients by (1) incorporating “entropy-free” rotational diffusion with translation-rotation coupling and (2) recapturing the missing entropy. Our findings shed light on the fundamental relationship between FG and CG dynamics in molecular fluids.more » « less
-
Abstract Bi2SeO2is a promisingn‐type semiconductor to pair withp‐type BiCuSeO in a thermoelectric (TE) device. The TE figure of meritzTand, therefore, the device efficiency must be optimized by tuning the carrier concentration. However, electron concentrations in self‐dopedn‐type Bi2SeO2span several orders of magnitude, even in samples with the same nominal compositions. Such unsystematic variations in the electron concentration have a thermodynamic origin related to the variations in native defect concentrations. In this study, first‐principles calculations are used to show that the selenium vacancy, which is the source ofn‐type conductivity in Bi2SeO2, varies by 1–2 orders of magnitude depending on the thermodynamic conditions. It is predicted that the electron concentration can be enhanced by synthesizing under more Se‐poor conditions and/or at higher solid‐state reaction temperatures (TSSR), which promote the formation of selenium vacancies without introducing extrinsic dopants. The computational predictions are validated through solid‐state synthesis of Bi2SeO2. More than two orders of magnitude increase are observed in the electron concentration simply by adjusting the synthesis conditions. Additionally, a significant effect of grain boundary scattering on the electron mobility in Bi2SeO2is revealed, which can also be controlled by adjusting TSSR. By simultaneously optimizing the electron concentration and mobility, azTof ≈0.2 is achieved at 773 K for self‐dopedn‐type Bi2SeO2. The study highlights the need for careful control of thermodynamic growth conditions and demonstrates TE performance improvement by varying synthesis parameters according to thermodynamic guidelines.more » « less
An official website of the United States government

