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Low bond coordination of surface atoms facilitates the injection of oxygen interstitial atoms into the bulk near room temperature from the clean surfaces of semiconducting metal oxides when exposed to liquid water, opening new prospects for postsynthesis defect engineering and isotopic fractionation. The injection rate and penetration depth vary considerably under identical experimental conditions, however, with the adsorption of adventitious carbon suggested as the cause. For water-submerged rutile TiO2(110) and wurtzite ZnO(0001), this work bolsters and refines that hypothesis by combining the isotopic self-diffusion measurements of oxygen with characterization by x-ray photoelectron spectroscopy and atomic force microscopy. Adventitious carbon likely diminishes injection rates by poisoning small concentrations of exceptionally active surface sites that either inject O or dissociate adsorbed OH to injectable O. These effects propagate into the penetration depth via the progressive saturation of Oi traps near the surface, which occurs less extensively as the injected flux decreases. 

Oxygen vacancies (V O ) influence many properties of ZnO in semiconductor devices, yet synthesis methods leave behind variable and unpredictable V O concentrations. Oxygen interstitials (O i ) move far more rapidly, so post-synthesis introduction of O i to control the V O concentration would be desirable. Free surfaces offer such an introduction mechanism if they are free of poisoning foreign adsorbates. Here, isotopic exchange experiments between nonpolar ZnO(101̄0) and O 2 gas, together with mesoscale modeling and first-principles calculations, point to an activation barrier for injection only 0.1–0.2 eV higher than for bulk site hopping. The modest barrier for hopping in turn enables diffusion lengths of tens to hundreds of nanometers only slightly above room temperature, which should facilitate defect engineering under very modest conditions. In addition, low hopping barriers coupled with statistical considerations lead to important qualitative manifestations in diffusion via an interstitialcy mechanism that does not occur for vacancies. 

Properties related to transport such as self-diffusion coefficients are relevant to fuel cells, electrolysis cells, and chemical/gas sensors. Prediction of self-diffusion coefficients from first-principles involves precise determination of both enthalpy and entropy contributions for point defect formation and migration. We use first-principles density functional theory to estimate the self-diffusion coefficient for neutral O0i and doubly ionized O i 2− interstitial oxygen in rutile TiO 2 and compare the results to prior isotope diffusion experiments. In addition to formation and migration energy, detailed estimates of formation and migration entropy incorporating both vibrational and ionization components are included. Distinct migration pathways, both based on an interstitialcy mechanism, are identified for O0i and O i 2− . These result in self-diffusion coefficients that differ by several orders of magnitude, sufficient to resolve the charge state of the diffusing species to be O i 2− in experiment. The main sources of error when comparing computed parameters to those obtained from experiment are considered, demonstrating that uncertainties due to computed defect formation and migration entropies are comparable in magnitude to those due to computed defect formation and migration energies. Even so, the composite uncertainty seems to limit the accuracy of first-principles calculations to within a factor of ±10 3 , demonstrating that direct connections between computation and experiment are now increasingly possible.