skip to main content
US FlagAn official website of the United States government
dot gov icon
Official websites use .gov
A .gov website belongs to an official government organization in the United States.
https lock icon
Secure .gov websites use HTTPS
A lock ( lock ) or https:// means you've safely connected to the .gov website. Share sensitive information only on official, secure websites.


Title: Symmetry-enforced chiral hinge states and surface quantum anomalous Hall effect in the magnetic axion insulator Bi2–xSmxSe3
The existence of topological hinge states is a key signature for a newly proposed class of topological matter, the second-order topological insulators. In the present paper, a universal mechanism to generate chiral hinge states in the ferromagnetic axion insulator phase is introduced, which leads to an exotic transport phenomenon, the quantum anomalous Hall effect (QAHE) on some particular surfaces determined by both the crystalline symmetry and the magnetization direction. A realistic material system, Sm-doped Bi2Se3, is then proposed to realize such exotic hinge states by combining first-principles calculations and Green’s function techniques. A physically accessible way to manipulate the surface QAHE is also proposed, which makes it very different from the QAHE in ordinary 2D systems.  more » « less
Award ID(s):
1653769
PAR ID:
10091724
Author(s) / Creator(s):
; ; ; ; ; ;
Date Published:
Journal Name:
Nature Physics
ISSN:
1745-2473
Format(s):
Medium: X
Sponsoring Org:
National Science Foundation
More Like this
  1. The studies of topological insulators (TI) and topological semimetals have been at frontiers of condensed matter physics and material science. Both classes of materials are characterized by robust surface states created by the topology of the bulk band structures and exhibit exotic transport properties. When magnetism is present in topological materials and breaks the time-reversal symmetry, more exotic quantum phenomena can be generated, e.g., quantum anomalous Hall effect (QAHE), axion insulator, and large intrinsic AHE. In this research update, we briefly summarize the recent research progress in magnetic topological materials, including intrinsic magnetic TI and magnetic Weyl semimetals. 
    more » « less
  2. Abstract Most topological insulators (TIs) discovered today in spinful systems can be transformed from topological semimetals (TSMs) with vanishing bulk gap via introducing the spin-orbit coupling (SOC), which manifests the intrinsic links between the gapped topological insulator phases and the gapless TSMs. Recently, we have discovered a family of TSMs in time-reversal invariant spinless systems, which host butterfly-like nodal-lines (NLs) consisting of a pair of identical concentric intersecting coplanar ellipses (CICE). In this Communication, we unveil the intrinsic link between this exotic class of nodal-line semimetals (NLSMs) and a $${{\mathbb{Z}}}_{4}$$ Z 4 = 2 topological crystalline insulator (TCI), by including substantial SOC. We demonstrate that in three space groups (i.e., P b a m (No.55), P 4/ m b m (No.127), and P 4 2 / m b c (No.135)), the TCI supports a fourfold Dirac fermion on the (001) surface protected by two glide symmetries, which originates from the intertwined drumhead surface states of the CICE NLs. The higher order topology is further demonstrated by the emergence of one-dimensional helical hinge states, indicating the discovery of a higher order topological insulator protected by a glide symmetry. 
    more » « less
  3. The quantum anomalous Hall effect (QAHE) is a robust topological phenomenon that features quantized Hall resistance at zero magnetic field. We report the QAHE in a rhombohedral pentalayer graphene-monolayer tungsten disulfide (WS2) heterostructure. Distinct from other experimentally confirmed QAHE systems, this system has neither magnetic element nor moiré superlattice effect. The QAH states emerge at charge neutrality and feature Chern numbersC= ±5 at temperatures of up to about 1.5 kelvin. This large QAHE arises from the synergy of the electron correlation in intrinsic flat bands of pentalayer graphene, the gate-tuning effect, and the proximity-induced Ising spin-orbit coupling. Our experiment demonstrates the potential of crystalline two-dimensional materials for intertwined electron correlation and band topology physics and may enable a route for engineering chiral Majorana edge states. 
    more » « less
  4. Abstract The bulk-boundary correspondence, which links a bulk topological property of a material to the existence of robust boundary states, is a hallmark of topological insulators. However, in crystalline topological materials the presence of boundary states in the insulating gap is not always necessary since they can be hidden in the bulk energy bands, obscured by boundary artifacts of non-topological origin, or, in the case of higher-order topology, they can be gapped altogether. Recently, exotic defects of translation symmetry called partial dislocations have been proposed to trap gapless topological modes in some materials. Here we present experimental observations of partial-dislocation-induced topological modes in 2D and 3D insulators. We particularly focus on multipole higher-order topological insulators built from circuit-based resonator arrays, since crucially they are not sensitive to full dislocation defects, and they have a sublattice structure allowing for stacking faults and partial dislocations. 
    more » « less
  5. Abstract Higher order topological insulators (HOTIs) are a new class of topological materials which host protected states at the corners or hinges of a crystal. HOTIs provide an intriguing alternative platform for helical and chiral edge states and Majorana modes, but there are very few known materials in this class. Recent studies have proposed Bi as a potential HOTI, however, its topological classification is not yet well accepted. In this work, we show that the (110) facets of Bi and BiSb alloys can be used to unequivocally establish the topology of these systems. Bi and Bi0.92Sb0.08(110) films were grown on silicon substrates using molecular beam epitaxy and studied by scanning tunneling spectroscopy. The surfaces manifest rectangular islands which show localized hinge states on three out of the four edges, consistent with the theory for the HOTI phase. This establishes Bi and Bi0.92Sb0.08as HOTIs, and raises questions about the topological classification of the full family of BixSb1−xalloys. 
    more » « less