Topological lattice defects, such as dislocations and grain boundaries (GBs), are ubiquitously present in the bulk of quantum materials and externally tunable in metamaterials. In terms of robust modes, localized near the defect cores, they are instrumental in identifying topological crystals, featuring the hallmark band inversion at a finite momentum (translationally active type). Here we show that the GB superlattices in both two-dimensional and three-dimensional translationally active higher-order topological insulators harbor a myriad of dispersive modes that are typically placed at finite energies, but always well-separated from the bulk states. However, when the Burgers vector of the constituting edge dislocations points toward the gapless corners or hinges, both second-order and third-order topological insulators accommodate self-organized emergent topological metals near the zero energy (half-filling) in the GB mini Brillouin zone. We discuss possible material platforms where our proposed scenarios can be realized through the band-structure and defect engineering.
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Bound states at partial dislocation defects in multipole higher-order topological insulators
The bulk-boundary correspondence, which links a bulk topological property of a material to the existence of robust boundary states, is a hallmark of topological insulators. However, in crystalline topological materials the presence of boundary states in the insulating gap is not always necessary since they can be hidden in the bulk energy bands, obscured by boundary artifacts of non-topological origin, or, in the case of higher-order topology, they can be gapped altogether. Recently, exotic defects of translation symmetry called partial dislocations have been proposed to trap gapless topological modes in some materials. Here we present experimental observations of partial-dislocation-induced topological modes in 2D and 3D insulators. We particularly focus on multipole higher-order topological insulators built from circuit-based resonator arrays, since crucially they are not sensitive to full dislocation defects, and they have a sublattice structure allowing for stacking faults and partial dislocations.
more » « less- Award ID(s):
- 1641084
- NSF-PAR ID:
- 10381699
- Publisher / Repository:
- Nature Publishing Group
- Date Published:
- Journal Name:
- Nature Communications
- Volume:
- 13
- Issue:
- 1
- ISSN:
- 2041-1723
- Format(s):
- Medium: X
- Sponsoring Org:
- National Science Foundation
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