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1. Roll‐to‐Roll Dry Transfer of Large‐Scale Graphene

   https://doi.org/10.1002/adma.202106615  

   Hong, Nan; Kireev, Dmitry; Zhao, Qishen; Chen, Dongmei; Akinwande, Deji; Li, Wei (November 2021, Advanced Materials)

   Abstract A major challenge for graphene applications is the lack of mass production technology for large‐scale and high‐quality graphene growth and transfer. Here, a roll‐to‐roll (R2R) dry transfer process for large‐scale graphene grown by chemical vapor deposition is reported. The process is fast, controllable, and environmentally benign. It avoids chemical contamination and allows the reuse of graphene growth substrates. By controlling tension and speed of the R2R dry transfer process, the electrical sheet resistance is achieved as 9.5 kΩ sq⁻¹, the lowest ever reported among R2R dry transferred graphene samples. The R2R dry transferred samples are used to fabricate graphene‐based field‐effect transistors (GFETs) on polymer. It is demonstrated that these flexible GFETs feature a near‐zero doping level and a gate leakage current one to two orders of magnitude lower than those fabricated using wet‐chemical etched graphene samples. The scalability and uniformity of the R2R dry transferred graphene is further demonstrated by successfully transferring a 3 × 3 in²sample and measuring its field‐effect mobility with 36 millimeter‐scaled GFETs evenly spaced on the sample. The field‐effect mobility of the R2R dry transferred graphene is determined to be 205 ± 36 cm² V⁻¹. 

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2. An Enhanced Verilog-A Model for Graphene Field-Effect Transistors Using Variable Fermi Velocity

   https://doi.org/10.3390/electronics13245051  

   Ji, Shuwei; Mappes, John; Koudelka, Peter; Scardelletti, Maximilian C; Zorman, Christian; Lavasani, Hossein M (December 2024, Electronics)

   This paper presents a novel Verilog-A model for the Fermi velocity in Graphene Field-Effect Transistors (GFETs). The Fermi velocity is an important parameter associated with the energy spectrum of the delocalized bonds in graphene which impact the performance of a GFET. Unlike existing GFET models where the Fermi velocity is assumed to have a constant value, the proposed model considers carrier concentrations in the channel and gate dielectrics to create a closed-form solution for the Fermi velocity, a parameter previously demonstrated to vary based on these two factors. The proposed mathematical model is then adapted to Verilog-A for interfacing with computer-aided design (CAD) circuit simulators. To demonstrate the accuracy of the proposed model, the simulation results are compared to measured drain–source currents obtained from various GFET devices (including GFETs measured by authors). The measured results show good agreement with the values predicted using the proposed model (<±1%), demonstrating the superior accuracy of the model compared to other published Verilog-A-based models, especially around the Dirac point. 

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3. Mechanically tunable elastic modulus of freestanding Ba1− x Sr x TiO3 membranes via phase-field simulation

   https://doi.org/10.1063/5.0099772  

   Zhang, Kena; Ren, Yao; Cao, Ye (October 2022, Applied Physics Letters)

   The freestanding ferroelectric membranes with super-elasticity show promising applications in flexible electronic devices such as transducers, memories, etc. While there have been recent studies on the effect of mechanical bending on the domain structure evolutions and phase transitions in ferroelectric membranes, its influence on Young's modulus of these freestanding membranes is less explored, which is crucial for the design and application of flexible electronics. Here, a phase-field model is developed to simulate the tunability of Young's modulus of freestanding Ba1−xSrxTiO3 membranes under mechanical bending. It is demonstrated that the bended membrane shows a uniform Young's modulus compared with unbended membrane. By increasing the bending angle, Young's modulus tunability is enhanced, which can be attributed to the vortex-like domain structures induced by the mechanical bending. These vortex-like domains with large domain wall energy inhibit the subsequent domain switching under externally applied tensile strain and reduce the eigenstrain variation, which leads to a large Young's modulus. In addition, the formation of vortex domain structure is suppressed with increasing Sr2+ content in Ba1−xSrxTiO3 membranes at the same bending degree, resulting in a decrease in Young's modulus tunability. Our work reveals that the tunability of Young's modulus of freestanding ferroelectric membranes can be achieved by mechanical bending, which provides guidance for designing flexible electronic devices. 

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4. Lateral Graphene p–n Junctions Realized by Nanoscale Bipolar Doping Using Surface Electric Dipoles and Self‐Organized Molecular Anions

   https://doi.org/10.1002/admi.201801380  

   Zhang, Yong; Hu, Guangliang; Gong, Maogang; Alamri, Mohammed; Ma, Chunrui; Liu, Ming; Wu, Judy_Z (November 2018, Advanced Materials Interfaces)

   Abstract Lateral p–n junctions take the unique advantages of 2D materials, such as graphene, to enable single‐atomic layer microelectronics. A major challenge in fabrication of the lateral p–n junctions is in the control of electronic properties on a 2D atomic sheet with nanometer precision. Herein, a facile approach that employs decoration of molecular anions of bis‐(trifluoromethylsulfonyl)‐imide (TFSI) to generate p‐doping on the otherwise n‐doped graphene by positively polarized surface electric dipoles (pointing toward the surface) formed on the surface oxygen‐deficient layer “intrinsic” to an oxide ferroelectric back gate is reported. The characteristic double conductance minimaV_Dirac−andV_Dirac+illustrated in the obtained lateral graphene p–n junctions can be tuned in the range of −1 to 0 V and 0 to +1 V, respectively, by controlling the TFSI anions and surface dipoles quantitatively. The unique advantage of this approach is in adoption of polarity‐controlled molecular ion attachment on graphene, which could be further developed for various lateral electronics on 2D materials. 

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5. Proximity-induced magnetization in graphene: Towards efficient spin gating

   Bosnar, M; Lončarić, I; Lazić, P; Belashchenko, K D; Žutić, I (November 2020, Physical review materials)

   Gate-tunable spin-dependent properties could be induced in graphene at room temperature through the magnetic proximity effect by placing it in contact with a metallic ferromagnet. Because strong chemical bonding with the metallic substrate makes gating ineffective, an intervening passivation layer is needed. Previously considered passivation layers result in a large shift of the Dirac point away from the Fermi level, so that unrealistically large gate fields are required to tune the spin polarization in graphene (Gr). We show that a monolayer of Au or Pt used as the passivation layer between Co and graphene brings the Dirac point closer to the Fermi level. In the Co/Pt/Gr system the proximity-induced spin polarization in graphene and its gate control are strongly enhanced by the presence of a surface band near the Fermi level. Furthermore, the shift of the Dirac point could be eliminated entirely by selecting submonolayer coverage in the passivation layer. Our findings open a path towards experimental realization of an optimized two-dimensional system with gate-tunable spin-dependent properties. 

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