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1. Contiguous and Atomically Thin Pt Film with Supra‐Bulk Behavior Through Graphene‐Imposed Epitaxy

   https://doi.org/10.1002/adfm.201902274  

   Choi, Ji Il ; Abdelhafiz, Ali ; Buntin, Parker ; Vitale, Adam ; Robertson, Alex W. ; Warner, Jamie ; Jang, Seung Soon ; Alamgir, Faisal M. ( September 2019 , Advanced Functional Materials)

   The nature of the atomic configuration and the bonding within epitaxial Pt‐graphene films is investigated. Graphene‐templated monolayer/few‐multilayers of Pt, synthesized as contiguous 2D films by room temperature electrochemical methods, is shown to exhibit a stable {100} structure in the 1–2 layer range. The fundamental question being investigated is whether surface Pt atoms rendered in these 2D architectures are as stable as those of their bulk Pt counterparts. Unsurprisingly, a single layer Pt on the graphene (Pt_1ML/GR) shows much larger Pt dissociation energy (−7.51 eV) than does an isolated Pt atom on graphene. However, the dissociation energy from Pt_1ML/GR is similar to that of bulk Pt(100), −7.77 eV, while in bi‐layer Pt on the graphene (Pt_2ML/GR), this energy changes to −8.63 eV, surpassing its bulk counterpart. At Pt_2ML/GR, the dissociation energy also slightly surpasses that of bulk Pt(111). Bulk‐like stability of atomically thin Pt–graphene results from a combination of interplanar PtC covalent bonding and inter/intraplanar metallic bonding. This unprecedented stability is also accompanied by a metal‐like presence of electronic states at the Fermi level. Such atomically thin metal‐graphene architectures can be a new stable platform for synthesizing 2D metallic films with various applications in catalysis, sensing, and electronics.

    

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2. Radiation-induced magnetoresistance oscillations in monolayer and bilayer graphene

   https://doi.org/10.1038/s41598-019-43866-4  

   Mani, R. G. ; Kriisa, A. ; Munasinghe, R. ( May 2019 , Scientific Reports)

   We examine the characteristics of the microwave/mm-wave/terahertz radiation-induced magnetoresistance oscillations in monolayer and bilayer graphene and report that the oscillation frequency of the radiation-induced magnetoresistance oscillations in the massless, linearly dispersed monolayer graphene system should depend strongly both on the Fermi energy, and the radiation frequency, unlike in the case of the massive, parabolic, GaAs/AlGaAs 2D electron system, where the radiation-induced magnetoresistance oscillation frequency depends mainly on the radiation frequency. This possible dependence of the magnetoresistance oscillation frequency on the Fermi level at a fixed radiation frequency also suggests a sensitivity to the gate voltage in gated graphene, which suggests anin-situtunable photo-excitation response in monolayer graphene that could be useful for sensing applications. In sharp contrast to monolayer graphene, bilayer graphene is expected to show radiation-induced magnetoresistance oscillations more similar to the results observed in the GaAs/AlGaAs 2D system. Such expectations for the radiation-induced magnetoresistance oscillations are presented here to guide future experimental studies in both of these modern atomic layer material systems.

    

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3. Electrically driven amplification of terahertz acoustic waves in graphene

   https://doi.org/10.1038/s41467-024-46819-2  

   Barajas-Aguilar, Aaron H. ; Zion, Jasen ; Sequeira, Ian ; Barabas, Andrew Z. ; Taniguchi, Takashi ; Watanabe, Kenji ; Barrett, Eric B. ; Scaffidi, Thomas ; Sanchez-Yamagishi, Javier D. ( March 2024 , Nature Communications)

   In graphene devices, the electronic drift velocity can easily exceed the speed of sound in the material at moderate current biases. Under these conditions, the electronic system can efficiently amplify acoustic phonons, leading to an exponential growth of sound waves in the direction of the carrier flow. Here, we show that such phonon amplification can significantly modify the electrical properties of graphene devices. We observe a superlinear growth of the resistivity in the direction of the carrier flow when the drift velocity exceeds the speed of sound — resulting in a sevenfold increase over a distance of 8 µm. The resistivity growth is observed at carrier densities away from the Dirac point and is enhanced at cryogenic temperatures. We develop a theoretical model for the resistivity growth due to the electrical amplification of acoustic phonons — reaching frequencies up to 2.2 THz — where the wavelength is controlled by gate-tunable transitions across the Fermi surface. These findings provide a route to on-chip high-frequency sound generation and detection in the THz frequency range.

    

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4. First-principles study of the impact of chemical doping and functional groups on the absorption spectra of graphene

   https://doi.org/10.1088/1361-6641/ac4406  

   Panneerselvam, Iyyappa Rajan ; Chakraborty, Pranay ; Nian, Qiong ; Lu, Yongfeng ; Liao, Yiliang ; Wang, Yan ( December 2021 , Semiconductor Science and Technology)

   Abstract The rational design of the electronic band structures and the associated properties (e.g. optical) of advanced materials has remained challenging for crucial applications in optoelectronics, solar desalination, advanced manufacturing technologies, etc. In this work, using first-principles calculations, we studied the prospects of tuning the absorption spectra of graphene via defect engineering, i.e. chemical doping and oxidation. Our computational analysis shows that graphene functionalization with single hydroxyl and carboxylic acid fails to open a band gap in graphene. While single epoxide functionalization successfully opens a bandgap in graphene and increases absorptivity, however, other optical properties such as reflection, transmission, and dielectric constants are significantly altered. Boron and nitrogen dopants lead to p- and n-type doping, respectively, while fluorine dopants or a single-carbon atomic vacancy cannot create a significant bandgap in graphene. By rigorously considering the spin-polarization effect, we find that titanium, zirconium, and hafnium dopants can create a bandgap in graphene via an induced flat band around the Fermi level as well as the collapse of the Dirac cone. In addition, silicon, germanium, and tin dopants are also effective in improving the optical characteristics. Our work is important for future experimental work on graphene for laser and optical processing applications. 

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5. Proximity-enhanced valley Zeeman splitting at the WS 2 /graphene interface

   https://doi.org/10.1088/2053-1583/acd5df  

   Faria Junior, Paulo E. ; Naimer, Thomas ; McCreary, Kathleen M. ; Jonker, Berend T. ; Finley, Jonathan J. ; Crooker, Scott A. ; Fabian, Jaroslav ; Stier, Andreas V. ( May 2023 , 2D Materials)

   The valley Zeeman physics of excitons in monolayer transition metal dichalcogenides provides valuable insight into the spin and orbital degrees of freedom inherent to these materials. Being atomically-thin materials, these degrees of freedom can be influenced by the presence of adjacent layers, due to proximity interactions that arise from wave function overlap across the 2D interface. Here, we report 60 T magnetoreflection spectroscopy of the A- and B- excitons in monolayer WS₂, systematically encapsulated in monolayer graphene. While the observed variations of the valley Zeeman effect for the A- exciton are qualitatively in accord with expectations from the bandgap reduction and modification of the exciton binding energy due to the graphene-induced dielectric screening, the valley Zeeman effect for the B- exciton behaves markedly different. We investigate prototypical WS₂/graphene stacks employing first-principles calculations and find that the lower conduction band of WS₂at the$K/K^{\mathrm{\prime }}$valleys (the${\mathrm{C}\mathrm{B}}^{-}$band) is strongly influenced by the graphene layer on the orbital level. Specifically, our detailed microscopic analysis reveals that the conduction band at theQpoint of WS₂mediates the coupling between${\mathrm{C}\mathrm{B}}^{-}$and graphene due to resonant energy conditions and strong coupling to the Dirac cone. This leads to variations in the valley Zeeman physics of the B- exciton, consistent with the experimental observations. Our results therefore expand the consequences of proximity effects in multilayer semiconductor stacks, showing that wave function hybridization can be a multi-step energetically resonant process, with different bands mediating the interlayer interactions. Such effects can be further exploited to resonantly engineer the spin-valley degrees of freedom in van der Waals and moiré heterostructures.

    

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