Rotationally aligned hexagonal boron nitride on sapphire by high-temperature molecular beam epitaxy
- Award ID(s):
- 1839196
- NSF-PAR ID:
- 10102999
- Publisher / Repository:
- American Physical Society
- Date Published:
- Journal Name:
- Physical Review Materials
- Volume:
- 3
- Issue:
- 6
- ISSN:
- 2475-9953; PRMHAR
- Format(s):
- Medium: X
- Sponsoring Org:
- National Science Foundation
More Like this
No document suggestions found